參數(shù)資料
型號: MSM51V64400
廠商: OKI SEMICONDUCTOR CO., LTD.
英文描述: 16M×4 Dynamic RAM(16M×4動態(tài)RAM)
中文描述: 1,600 × 4動態(tài)RAM(1,600 × 4動態(tài)內(nèi)存)
文件頁數(shù): 1/15頁
文件大?。?/td> 455K
代理商: MSM51V64400
1/15
Semiconductor
MSM51V64400
DESCRIPTION
The MSM51V64400 is a 16,777,216-word
4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MSM51V64400 achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer
metal CMOS process. The MSM51V64400 is available in a 32-pin plastic SOJ or 32-pin plastic TSOP.
FEATURES
16,777,216-word
4-bit configuration
Single 3.3 V power supply,
±
0.3 V tolerance
Input
: LVTTL compatible, low input capacitance
Output : LVTTL compatible, 3-state
Refresh :
RAS
-only refresh
CAS
before
RAS
refresh, hidden refresh
Fast page mode, read modify write capability
CAS
before
RAS
refresh, hidden refresh,
RAS
-only refresh capability
Package options:
32-pin 400 mil plastic SOJ
(SOJ32-P-400-1.27)
32-pin 400 mil plastic TSOP
(TSOPII32-P-400-1.27-K) (Product : MSM51V64400-xxTS-K)
: 8192 cycles/64 ms
: 4096 cycles/64 ms
(Product : MSM51V64400-xxJS)
xx indicates speed rank.
PRODUCT FAMILY
16,777,216-Word
4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
90 ns
110 ns
504 mW
432 mW
Family
Access Time (Max.)
t
RAC
50 ns
25 ns
60 ns
30 ns
Cycle Time
(Min.)
Standby (Max.)
Power Dissipation
Operating (Max.)
MSM51V64400-50
MSM51V64400-60
t
AA
t
CAC
13 ns
15 ns
t
OEA
13 ns
15 ns
1.8 mW
E2G1009-17-43
This version: Jan. 1998
Previous version: May 1997
相關PDF資料
PDF描述
MSM51V64405 16M×4 Dynamic RAM(16M×4動態(tài)RAM)
MSM51V64800 8M×8 Dynamic RAM(8M×8動態(tài)RAM)
MSM51V64805 8M×8 Dynamic RAM(8M×8動態(tài)RAM)
MSM51V65160 4M×16 Dynamic RAM(4M×16動態(tài)RAM)
MSM51V65400 16M×4 Dynamic RAM(16M×4動態(tài)RAM)
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