參數(shù)資料
型號: MSM514252A
廠商: OKI SEMICONDUCTOR CO., LTD.
英文描述: 262,144-Word x 4-Bit Multiport DRAM
中文描述: 262,144字× 4位多端口內(nèi)存
文件頁數(shù): 31/33頁
文件大?。?/td> 358K
代理商: MSM514252A
MSM514252A
Semiconductor
31/33
POWER-UP
Power must be applied to the
RAS
and
DT
/
OE
input signals to pull them "high" before or at the
same time as the V
CC
supply is turned on. After power-up, a pause of 200
μ
seconds (minimum)
is required with
RAS
and
DT
/
OE
held "high".
After the pause, a minimum of 8
RAS
and 8 SC dummy cycles must be performed to stabilize the
internal circuitry, before valid read, write or transfer operations can begin. During the
initialization period, the
DT
/
OE
signal must be held "high". If the internal refresh counter is
used, a minimum 8
CAS
-before-
RAS
initialization cycles are required instead of 8
RAS
cycles.
Initial State After Power-up
When power is achieved with
RAS
,
CAS
,
DT
/
OE
and
WB
/
WE
held "high" the internal state of
the MSM514252A is automatically set as follows.
SAM port -------------------
Input mode
Write mask register ------
Write mode
TAP pointer----------------
Invalid
However, the initial state can not be guaranteed for various power-up conditions and input
signal levels. Therefore, it is recommended that the initial state be set after the initialization of
the device is performed (200
μ
seconds pause followed by a minimum of 8
RAS
cycles and 8 SC
cycles) and before valid operations begin.
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