參數(shù)資料
型號(hào): MSM514221B
廠商: OKI SEMICONDUCTOR CO., LTD.
英文描述: 262,263-Word x 4-Bit Field Memory
中文描述: 262263字× 4位場(chǎng)記憶
文件頁(yè)數(shù): 10/15頁(yè)
文件大?。?/td> 154K
代理商: MSM514221B
10/15
Semiconductor
MSM514221B
Notes: 1.
Input signal reference levels for the parameter measurement are V
IH
= 2.4 V and V
IL
= 0.8 V. The transition time t
T
is defined to be a transition time that signal transfers
between V
IH
= 2.4 V and V
IL
= 0.8 V.
2.
AC measurements assume t
T
= 3 ns.
3.
Read address must have more than a 600 address delay than write address in every
cycle when asynchronous read/write is performed.
4.
Read must have more than a 600 address delay than write in order to read the data
written in a current series of write cycles which has been started at last write reset
cycle: this is called "new data read".
When read has less than a 119 address delay than write, the read data are the data
written in a previous series of write cycles which had been written before at last write
reset cycle: this is called "old data read".
5.
When the read address delay is between more than 120 and less than 599, read data
will be undetermined. However, normal write is achieved in this address condition.
6.
Outputs are measured with a load equivalent to 2 TTL loads and 30 pF.
Output reference levels are V
OH
= 2.4 V and V
OL
= 0.8 V.
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