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參數(shù)資料
| 型號(hào)： | MSM5116800C-70TS-L |
| 廠商： | OKI ELECTRIC INDUSTRY CO LTD |
| 元件分類： | DRAM |
| 英文描述： | 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28 |
| 封裝： | 0.400 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-28 |
| 文件頁(yè)數(shù)： | 15/16頁(yè) |
| 文件大?。?/td> | 490K |
| 代理商： | MSM5116800C-70TS-L |
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Semiconductor
MSM5116800C
Notes:
1. A start-up delay of 200
s is required after power-up, followed by a minimum of eight
initialization cycles (RAS-only refresh or CAS before RAS refresh) before proper device
operation is achieved.
2. The AC characteristics assume tT = 5 ns.
3. VIH (Min.) and VIL (Max.) are reference levels for measuring input timing signals.
Transition times (tT) are measured between VIH and VIL.
4. This parameter is measured with a load circuit equivalent to 2 TTL loads and 100 pF.
5. Operation within the tRCD (Max.) limit ensures that tRAC (Max.) can be met.
tRCD (Max.) is specified as a reference point only. If tRCD is greater than the specified
tRCD (Max.) limit, then the access time is controlled by tCAC.
6. Operation within the tRAD (Max.) limit ensures that tRAC (Max.) can be met.
tRAD (Max.) is specified as a reference point only. If tRAD is greater than the specified
tRAD (Max.) limit, then the access time is controlled by tAA.
7. tOFF (Max.) and tOEZ (Max.) define the time at which the output achieves the open
circuit condition and are not referenced to output voltage levels.
8. tRCH or tRRH must be satisfied for a read cycle.
9. tWCS, tCWD, tRWD, tAWD and tCPWD are not restrictive operating parameters. They are
included in the data sheet as electrical characteristics only. If tWCS ≥ tWCS (Min.), then
the cycle is an early write cycle and the data out will remain open circuit (high
impedance) throughout the entire cycle. If tCWD ≥ tCWD (Min.) , tRWD ≥ tRWD (Min.),
tAWD ≥ tAWD (Min.) and tCPWD ≥ tCPWD (Min.), then the cycle is a read modify write
cycle and data out will contain data read from the selected cell; if neither of the above
sets of conditions is satisfied, then the condition of the data out (at access time) is
indeterminate.
10. These parameters are referenced to the CAS leading edge in an early write cycle, and
to the WE leading edge in an OE control write cycle, or a read modify write cycle.
11. The test mode is initiated by performing a WE and CAS before RAS refresh cycle.
This mode is latched and remains in effect until the exit cycle is generated.
The test mode specified in this data sheet is a 2-bit parallel test function. CA8 is not
used. In a read cycle, if all internal bits are equal, the DQ pin will indicate a high
level. If any internal bits are not equal, the DQ pin will indicate a low level.
The test mode is cleared and the memory device returned to its normal operating
state by performing a RAS-only refresh cycle or a CAS before RAS refresh cycle.
12. In a test mode read cycle, the value of access time parameters is delayed for 5 ns for the
specified value. These parameters should be specified in test mode cycle by adding the
above value to the specified value in this data sheet.
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| MSM5116800C-XXJS | 制造商:OKI 制造商全稱:OKI electronic componets 功能描述:2,097,152-Word X 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE |
| MSM5116800C-XXTS-K | 制造商:OKI 制造商全稱:OKI electronic componets 功能描述:2,097,152-Word X 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE |
| MSM5116800C-XXTS-L | 制造商:OKI 制造商全稱:OKI electronic componets 功能描述:2,097,152-Word X 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE |
| MSM5116805A | 制造商:OKI 制造商全稱:OKI electronic componets 功能描述:2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO |
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