參數(shù)資料
型號(hào)： MSK3001
廠商： MS KENNEDY CORP
元件分類： JFETs
英文描述： 5.6 A, 100 V, 0.3 ohm, 6 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： CERAMIC, SIP-11
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 131K
代理商： MSK3001
1
2
3
4
Drain-Source Leakage Current
Gate-Source Threshold Voltage
Drain-Source On Resistance
Forward Transconductance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-Source Breakdown Voltage
Gate-Source Leakage Current
N-Channel (Q1,Q3,Q5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
P-CHANNEL (Q2,Q4,Q6)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BODY DIODE
91mJ
210mJ
+175°C MAX
-55°C to +150°C
-55°C to +125°C
200°C MAX
Single Pulse Avalanche Energy
(Q1,Q3,Q5)
(Q2,Q4,Q6)
Junction Temperature
Storage Temperature
Case Operating Temperature Range
Lead Temperature Range
(10 Seconds Lead Only)
Drain to Source Voltage
Drain to Gate Voltage
(RGS=1MΩ)
Gate to Source Voltage
(Continuous)
Continuous Current
Pulsed Current
Thermal Resistance
(Junction to Case)
ABSOLUTE MAXIMUM RATINGS
VDSS
VDGDR
VGS
ID
IDM
RTH-JC
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○○○
○
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○
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○
○○○○○○○
○
○○○○○○○
TJ
TST
TC
TLD
100V MAX
±20V MAX
5.6A MAX
22A MAX
6°C/W
○○○○○○○○○○
VGS=0 ID=0.25mA (All Transistors)
VDS=100V VGS=0V (Q1,Q3,Q5)
VDS=-100V VGS=0V (Q2,Q4,Q6)
VGS=±20V VDS=0 (All Transistors)
VDS=VGS ID=250μA (Q1,Q3,Q5)
VDS=VGS ID=250μA (Q2,Q4,Q6)
VGS=10V ID=5.6A (Q1,Q3,Q5)
VGS=-10V ID=-3.4A (Q2,Q4,Q6)
VGS=10V ID=5.6A (Q1,Q3,Q5)
VGS=10V ID=-3.4A (Q2,Q4,Q6)
VDS=25V ID=5.7A (Q1,Q3,Q5)
VDS=-50V ID=-3.4A (Q2,Q4,Q6)
ID=5.7A
VDS=80V
VGS=10V
VDD=50V
ID=5.7A
RG=22Ω
RD=8.6Ω
VGS=0V
VDS=25V
f=1MHz
ID=-6.8A
VDS=-80V
VGS=-10V
VDD=-50V
ID=-6.8A
RG=18Ω
RD=7.1Ω
VGS=0V
VDS=-25V
f=1MHz
IS=5.5A VGS=0V (Q1,Q3,Q5)
IS=-5.6A VGS=0V (Q2,Q4,Q6)
IS=5.7A di/dt=100A/μS (Q1,Q3,Q5)
IS=-6.8A di/dt=100A/μS (Q2,Q4,Q6)
IS=5.7A di/dt=100A/μS (Q1,Q3,Q5)
IS=-6.8A di/dt=100A/μS (Q2,Q4,Q6)
Parameter
Units
MSK3001
Test Conditions
V
μA
nA
V
Ω
S
nC
nS
pF
nC
nS
pF
V
nS
μC
Min.
100
-
2.0
-2.0
-
2.7
1.5
-
Typ.
-
0.18
0.37
-
4.5
23
32
23
330
92
54
-
9.6
29
21
25
390
170
45
1.3
-1.6
99
100
0.39
0.33
Max.
-
25
-100
±100
4.0
-4.0
0.30
0.75
0.21
0.60
-
25
4.8
11
-
18
3.0
9.0
-
150
200
0.58
0.66
ELECTRICAL SPECIFICATIONS
2
1
3
1
NOTES:
This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only.
Resistance as seen at package pins.
Resistance for die only; use for thermal calculations.
TA=25°C unless otherwise specified.
4
2
Rev. C 7/10
相關(guān)PDF資料
PDF描述
MSK3014 10 A, 100 V, 0.2 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
MSK3017 30 A, 200 V, 0.09 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
MSK3018 30 A, 55 V, 0.04 ohm, 6 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
MSK4101 50 A, 600 V, N-CHANNEL IGBT
MSK4101B 50 A, 600 V, N-CHANNEL IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MSK3002 制造商:未知廠家 制造商全稱:未知廠家 功能描述:H-BRIDGE MOSFET POWER MODULE
MSK3003 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THREE PHASE BRIDGE MOSFET POWER MODULE
MSK3004 制造商:MSK 制造商全稱:M.S. Kennedy Corporation 功能描述:H-BRIDGE MOSFET POWER MODULE
MSK3013 制造商:MSK 制造商全稱:M.S. Kennedy Corporation 功能描述:QUAD N-CHANNEL MOSFET POWER MODULE
MSK3014 制造商:未知廠家 制造商全稱:未知廠家 功能描述:H-BRIDGE MOSFET POWER MODULE
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