- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄380517 > MSG33001 (PANASONIC CORP) SiGe HBT type For low-noise RF amplifier PDF資料下載
參數(shù)資料
| 型號(hào)： | MSG33001 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | SiGe HBT type For low-noise RF amplifier |
| 中文描述： | L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | 0.80 X 1.20 MM, 0.52 MM HEIGHT, ROHS COMPLIANT, ULTRA MINIATURE, SSSMINI3-F1, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 95K |
| 代理商： | MSG33001 |
Transistors
MSG33001
SiGe HBT type
1
Publication date: October 2004
SJC00299BED
For low-noise RF amplifier
■
Features
Compatible between high breakdown voltage and high cutoff fre-
quency
Low-noise, high-gain amplification
Suitable for high-density mounting and downsizing of the equip-
ment for Ultraminiature package
0.8 mm
×
1.2 mm (height 0.52 mm)
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
I
CBO
I
CEO
V
CB
=
9 V, I
E
=
0
V
CE
=
6 V, I
B
=
0
V
EB
=
1 V, I
C
=
0
V
CE
=
3 V, I
C
=
3 mA
V
CE
=
3 V, I
C
=
10 mA, f
=
2 GHz
V
CE
=
3 V, I
C
=
10 mA, f
=
2 GHz
V
CE
=
3 V, I
C
=
3 mA, f
=
2 GHz
V
CB
= 3 V, I
E
= 0, f = 1 MHz
1
nA
Collector-emitter cutoff current (Base open)
1
μ
A
μ
A
Emitter-base cutoff current (Collector open)
I
EBO
1
Forward current transfer ratio
h
FE
f
T
100
220
Transition frequency
19
GHz
Forward transfer gain
S
21e
2
9.0
11.0
dB
Noise figure
NF
1.4
2.0
dB
Collector output capacitance
(Common base, input open circuited)
C
ob
0.3
0.6
pF
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
9
V
Collector-emitter voltage (Base open)
V
CEO
6
V
Emitter-base voltage (Collector open)
V
EBO
I
C
1
V
Collector current
30
mA
Collector power dissipation *
P
C
100
mW
Junction temperature
T
j
T
stg
125
°
C
°
C
Storage temperature
55 to
+
125
Marking Symbol: 5S
1: Base
2: Emitter
3: Collector
SSSMini3-F1 Package
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note)*: Copper plate at the collector is 5.0 mm
2
on substrate at 10 mm
×
12
mm
×
0.8 mm.
1
±
0
0
±
0
0
0
5
0
0
±
0
0
0.33
(0.40)
(0.40)
0.80
±
0.05
1.20
±
0.05
1
2
3
5
+0.05
0.10
+0.05
0.23
+0.05
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MSG43001 | SiGe HBT type For low-noise RF amplifier |
| MSK155 | HIGH POWER DUAL OPERATIONAL AMPLIFIER |
| MSK155E | HIGH POWER DUAL OPERATIONAL AMPLIFIER |
| MSK155H | HIGH POWER DUAL OPERATIONAL AMPLIFIER |
| MSK3013 | QUAD N-CHANNEL MOSFET POWER MODULE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MSG33002 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:SIGE HBT TYPE FOR LOW-NOISE RF AMPLIFIER |
| MSG36E41 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:SiGe HBT type |
| MSG43001 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:SiGe HBT type For low-noise RF amplifier |
| MSG43004 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:SiGe HBT type For low-noise RF amplifier |
| MSGB39WP | 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:HIGH EFF.RED/GREEN DUAL COLOR LAMP |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。