- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄39913 > MSE1PBHM3/89A (VISHAY SEMICONDUCTORS) 1 A, 100 V, SILICON, SIGNAL DIODE PDF資料下載
參數(shù)資料
| 型號： | MSE1PBHM3/89A |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE |
| 封裝： | HOLOGEN FREE AND ROHS COMPLIANT, PLASTIC, MICROSMP, 2 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 86K |
| 代理商： | MSE1PBHM3/89A |
Document Number: 89067
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 19-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MSE1PB thru MSE1PJ
Vishay General Semiconductor
New Product
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Instantaneous Forward Voltage (V)
In
s
tantaneou
s
Forwar
d
Curr
ent
(A)
10
1
0.1
0.01
0.4
0
0.8
1.2
1.6
2.0
2.4
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
T
J = 50 °C
T
J = 75 °C
T
J = 100 °C
T
J = 175 °C
100
10
1
0.1
0.001
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
In
s
tantaneou
s
Rever
s
e
Curr
ent
(μA)
0.01
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
T
J = 75 °C
T
J = 100 °C
T
J = 175 °C
Reverse Voltage (V)
Junction
Capacitanc
e
(pF)
10
1
0.1
1
10
100
t - Pulse Duration (s)
1000
1
0.01
1
10
1000
100
0.1
100
10
Tr
a
n
s
ient
Thermal
Impedance
(°C/W)
Junction to Ambient
0.106 (2.70)
0.091 (2.30)
0.055 (1.40)
0.047 (1.20)
Cathode Band
MicroSMP
0.030 (0.75)
0.022 (0.55)
0.030 (0.75)
0.022 (0.55)
0.059 (1.50)
0.043 (1.10)
0.039 (0.98)
0.031 (0.78)
0.091 (2.30)
0.083 (2.10)
0.020 (0.50)
0.043
(1.10)
0.011 (0.27)
0.005 (0.12)
0.079
(2.00)
0.032
(0.80)
0.032
(0.80)
Mounting Pad Layout
0.029 (0.73)
0.025 (0.63)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MSICSN10120CC | 10 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE, TO-257AA |
| MSKD60-12 | 60 A, 1200 V, SILICON, RECTIFIER DIODE |
| MSKM-723-44 | SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE |
| MSKM-709-Q2 | SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE |
| MSKM-716-U2 | SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MSE1PB-M3/89A | 功能描述:整流器 1.0 Amp 100 Volt 20 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MSE1PD | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Surface Mount ESD Capability Rectifier |
| MSE1PDHM3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Surface Mount ESD Capability Rectifier |
| MSE1PDHM3/89A | 功能描述:整流器 1.0 Amp 200 Volt 20 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MSE1PD-M3/89A | 功能描述:整流器 1.0 Amp 200 Volt 20 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。