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| 型號(hào)： | MSD6150RL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-92 |
| 封裝： | CASE 29-11, TO-226AA, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 119K |
| 代理商： | MSD6150RL |
Dual Diode
Common Anode
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
70
Vdc
Peak Forward Recurrent Current
IF
200
mAdc
Peak Forward Surge Current
(Pulse Width = 10
sec)
IFM(surge)
500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD(1)
625
5.0
mW
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg(1)
–55 to +135
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Typ
Max
Unit
Breakdown Voltage
(I(BR) = 100 Adc)
V(BR)
70
—
Vdc
Reverse Current
(VR = 50 Vdc)
IR
—
0.1
Adc
Forward Voltage
(IF = 10 mAdc)
VF
—
0.80
1.0
Vdc
Capacitance
(VR = 0)
C
—
5.0
8.0
pF
Reverse Recovery Time
(IF = IR = 10 mAdc, VR = 5.0 Vdc, irr = 1.0 mAdc)
trr
—
100
ns
1. Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: PD = 1.0 W @ TC = 25°C,
Derate above 8.0 mW/
°C, PD = 10 W @ TC = 25°C, Derate above 80 mW/°C, TJ, Tstg = –55 to +150°C, θJC = 12.5°C/W, θJA = 125°C.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 1
954
Publication Order Number:
MSD6150/D
MSD6150
CASE 29–11, STYLE 4
TO–92 (TO–226AA)
1
2
3
3 Anode
Cathode 1
2 Cathode
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