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參數(shù)資料
| 型號： | MSD6100RL1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-92 |
| 封裝： | CASE 29-11, TO-226AA, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 118K |
| 代理商： | MSD6100RL1 |
Dual Switching Diode
Common Cathode
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
100
Vdc
Recurrent Peak Forward Current
IF
200
mAdc
Peak Forward Surge Current
(Pulse Width = 10
sec)
IFM(surge)
500
mAdc
Power Dissipation @ TA = 25°C
Derate above 25
°C
PD(1)
625
5.0
mW
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg(1)
–55 to +135
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
Breakdown Voltage
(I(BR) = 100 Adc)
V(BR)
100
—
Vdc
Reverse Current
(VR = 100 Vdc)
(VR = 50 Vdc)
(VR = 50 Vdc, TA = 125°C)
IR
—
5.0
0.1
50
Adc
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 100 mAdc)
VF
0.55
0.67
0.75
0.7
0.82
1.1
Vdc
Capacitance
(VR = 0)
C
—
1.5
pF
Reverse Recovery Time
(IF = IR = 10 mAdc, VR = 5.0 Vdc, irr = 1.0 mAdc)
trr
—
4.0
ns
1. Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: PD = 1.0 W @ TC = 25°C,
Derate above 25
°C 8.0 mW/°C, TJ = –65 to +150°C, θJC = 125°C/W.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 1
952
Publication Order Number:
MSD6100/D
MSD6100
CASE 29–11, STYLE 3
TO–92 (TO–226AA)
1
2
3
3 Cathode
Anode 1
2 Anode
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