參數(shù)資料
型號(hào): MSC82003
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: S BAND, Si, NPN, RF POWER TRANSISTOR
封裝: 0.250 INCH, HERMETIC SEALED, MICROSTRIP, FM-2
文件頁數(shù): 1/2頁
文件大小: 55K
代理商: MSC82003
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/2
Specifications are subject to change without notice.
CHARACTERISTICS T
C = 25
OC
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 1.0 mA
45
V
BVCER
IC = 5.0 mA
RBE = 10
45
V
BVEBO
IE = 1.0 mA
3.5
V
ICBO
VCB = 28 V
1.0
mA
hFE
VCE = 5.0 V
IC = 200 mA
15
120
---
Cob
VCB = 28 V
f = 1.0 MHz
3.5
pF
PG
η
C
VCC = 28 V
POUT = 3.0 W
f = 2.0 GHz
10
35
dB
%
NPN SILICON RF POWER TRANSISTOR
MSC82003
DESCRIPTION:
The
ASI MSC82003 is Designed for
General Purpose Class C Power
Amplifier Applications up to 2300 MHz.
FEATURES:
P
G = 10 dB min. at 3 W/ 2,000 MHz
Hermetic Microstrip Package
Omnigold Metalization System
MAXIMUM RATINGS
IC
600 mA
VCC
35 V
PDISS
21.8 W @ TC = 25
OC
TJ
-65
OC to +200 OC
TSTG
-65
OC to +200 OC
θ
JC
15
OC/W
PACKAGE STYLE .250 2L FLG
Common Base
MINIMUM
inches / mm
.740 / 18.80
.128 / 3.25
.245 / 6.22
.028 / 0.71
.110 / 2.79
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.032 / 0.81
.117 / 2.97
.132 / 3.35
inches / mm
.117 / 2.97
H
.560 / 14.22
.570 / 14.48
DIM
K
L
I
J
.790 / 20.07
.225 / 5.72
.003 / 0.08
.810 / 20.57
.235 / 5.97
.007 / 0.18
L
G
I
J
K
H
F
B
E
C
D
A
N
M
P
.060 x 45°
CHAMFER
P
N
M
.149 / 3.78
.058 / 1.47
.187 / 4.75
.068 / 1.73
.165 / 4.19
.185 / 4.70
.135 / 3.43
.119 / 3.02
.125 / 3.18
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