參數(shù)資料
型號： MSC81350M
廠商： 意法半導(dǎo)體
英文描述： RF & Microwave Transistors Avionics Applications(用于航空電子的RF和微波晶體管)
中文描述： 射頻
文件頁數(shù)： 1/5頁
文件大小： 75K
代理商： MSC81350M
October 1992
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .400 2NLFL (S042)
hermetically sealed
ORDER CODE
MSC81350M
.
REFRACTORY/GOLD METALLIZATION
.
RUGGEDIZED VSWR 20:1
.
INTERNAL INPUT/OUTPUT MATCHING
.
LOW THERMAL RESISTANCE
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
350 W MIN. WITH 7.0 dB GAIN
DESCRIPTION
The MSC81350M device is a high power pulsed
transistor specifically designed for IFF avionics
applications.
This device is capable of withstanding a minimum
20:1 load VSWR at any phase angle under full
rated conditions. Low RF thermal resistance and
semi automatic wire bonding techniques ensure
high reliability and product consistency.
The
MSC81350M
is
housed
AMPAC
package
with
matching structures.
in
the
input/output
unique
internal
PIN CONNECTION
BRANDING
81350M
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
P
DISS
I
C
V
CC
T
J
T
STG
Parameter
(T
C
≤
55
°
C)
Value
720
19.8
55
Unit
W
A
V
°
C
°
C
Power Dissipation*
Device Current*
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
250
65 to +200
R
TH(j-c)
Junction-Case Thermal Resistance*
0.20
°
C/W
*Appliesonlyto ratedRF amplifier operation
MSC81350M
1. Collector
2. Base
3. Emitter
4. Base
THERMAL DATA
1/5
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參數(shù)描述
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