參數(shù)資料
型號: MSC3000
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 小信號晶體管
英文描述: 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
中文描述: S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: 0.250 INCH, FM-2
文件頁數(shù): 1/1頁
文件大?。?/td> 15K
代理商: MSC3000
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CER
I
C
= 5.0 mA
BV
CBO
I
C
= 1.0 mA
BV
EBO
I
E
= 1.0 mA
I
CBO
V
CB
= 28 V
h
FE
V
CE
= 5.0 V I
C
= 500 mA
NONE
TEST CONDITIONS
R
BE
= 10
MINIMUM TYPICAL MAXIMUM
50
UNITS
V
50
V
V
μA
---
3.5
250
20
120
C
OB
V
CB
= 28 V
f = 1.0 MHz
2.5
pF
P
G
η
C
V
CC
= 28 V
P
OUT
= 0.5 W f = 3.0 GHz
7.0
25
dB
%
NPN SILICON RF POWER TRANSISTOR
MSC3000
DESCRIPTION:
The
ASI MSC3000
is Designed for
general purpose Amplifier Applications
up to 3500 MHz.
FEATURES:
P
OUT
= 5.0 W Typ. at 3 GHz
Common Base
Configuration
Omnigold
Metellization System
MAXIMUM RATINGS
I
C
100 mA
V
CC
30 V
P
DISS
2.5 W @ T
C
85 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +200 °C
θ
JC
45 °C/W
PACKAGE STYLE .250 2L FLG (B)
1
1 = COLLECTOR 2 = BASE 3 = EMITTER
MINIMUM
inches / mm
1.050 / 26.67
.120 / 3.05
.245 / 6.22
.552 / 14.02
.790 / 20.07
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.255 / 6.48
.572 / 14.53
.810 / 20.57
.140 / 3.56
H
.003 / 0.08
.007 / 0.18
DIM
K
I
J
.052 / 1.32
.072 / 1.83
.130 / 3.30
CHAMFER
A
B
D
E
F
G
H
I
K
C
J
.100 X 45°
.095 / 2.41
.105 / 2.67
.285 / 7.24
.210 / 5.33
.120 / 3.05
2
3
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