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參數(shù)資料
| 型號： | MSC2295-BT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN RF Amplifier Transistors Surface Mount |
| 中文描述： | Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | SC-59, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 112K |
| 代理商： | MSC2295-BT1 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MAXIMUM RATINGS
(TA = 25
°
C)
Rating
Symbol
Value
Unit
Collector–Base Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
30
Vdc
Collector–Emitter Voltage
20
Vdc
Emitter–Base Voltage
5.0
Vdc
Collector Current — Continuous
30
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
PD
TJ
Tstg
200
mW
Junction Temperature
150
°
C
Storage Temperature
–55 ~ +150
°
C
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C)
Characteristic
Symbol
Min
Max
Unit
Collector–Base Cutoff Current
(VCB = 10 Vdc, IE = 0)
DC Current Gain(1)
(VCB = 10 Vdc, IC = –1.0 mAdc)
ICBO
—
0.1
μ
Adc
MSC2295–BT1
MSC2295–CT1
hFE
70
110
140
220
—
Collector–Gain — Bandwidth Product
(VCB = 10 Vdc, IE = –1.0 mAdc)
fT
150
—
MHz
Reverse Transistor Capacitance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 10.7 MHz)
1. Pulse Test: Pulse Width
≤
300
μ
s, D.C.
≤
2%.
Cre
—
1.5
pF
DEVICE MARKING
Marking Symbol
VB
X
MSC2295–BT1
VC
X
MSC2295–CT1
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MSC2295–BT1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Devices
CASE 318D–03, STYLE 1
SC–59
2
1
3
COLLECTOR
3
2
BASE
1
EMITTER
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MSC2295-CT1 | NPN RF Amplifier Transistors Surface Mount |
| MSC2295BT1 | NPN RF Amplifier Transistors Surface Mount |
| MSC2295-CT1 | NPN RF Amplifier Transistors Surface Mount |
| MSC2295-CT1 | NPN RF Amplifier Transistors Surface Mount |
| MSC2295-BT1 | NPN RF Amplifier Transistors Surface Mount |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MSC2295-BT1G | 功能描述:兩極晶體管 - BJT 30V RF NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MSC2295-CT1 | 功能描述:兩極晶體管 - BJT 30V RF NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MSC2295-CT1G | 功能描述:兩極晶體管 - BJT 30V RF NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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