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| 型號： | MSC1211Y3PAGR |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 8-BIT, FLASH, 40 MHz, MICROCONTROLLER, PQFP64 |
| 封裝： | GREEN, PLASTIC, TQFP-64 |
| 文件頁數(shù)： | 40/111頁 |
| 文件大?。?/td> | 1113K |
| 代理商： | MSC1211Y3PAGR |
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MSC1211, MSC1212
MSC1213,MSC1214
SBAS323G JUNE 2004 REVISED OCTOBER 2007
www.ti.com
34
The MSC1211/12/13/14 allow the user to partition the
Flash Memory between Program Memory and Data
Memory. For instance, the MSC1213Y5 contains 32kB of
Flash
Memory
on-chip.
Through
the
hardware
configuration registers, the user can define the partition
between Program Memory (PM) and Data Memory (DM),
as shown in Table 4 and Table 5. The MSC1211/12/13/14
families offer four memory configurations.
Table 4. MSC1211/12/13/14 Flash Partitioning
HCR0
MSC121xY2
MSC121xY3
MSC121xY4
MSC121xY5
DFSEL
PM
DM
PM
DM
PM
DM
PM
DM
000
0kB
4kB
0kB
8kB
0kB
16kB
0kB
32kB
001
0kB
4kB
0kB
8kB
0kB
16kB
0kB
32kB
010
0kB
4kB
0kB
8kB
0kB
16kB
011
0kB
4kB
0kB
8kB
24kB
8kB
100
0kB
4kB
12kB
4kB
28kB
4kB
101
2kB
6kB
2kB
14kB
2kB
30kB
2kB
110
3kB
1kB
7kB
1kB
15kB
1kB
31kB
1kB
111 (default)
4kB
0kB
8kB
0kB
16kB
0kB
32kB
0kB
NOTE: When a 0kB Program Memory configuration is selected, program
execution is external.
Table 5. MSC1211/12/13/14 Flash Memory
Partitioning
HCR0
MSC121xY2
MSC121xY3
MSC121xY4
MSC121xY5
DFSEL
PM
DM
PM
DM
PM
DM
PM
DM
000
0000
0400-
13FF
0000
0400-
23FF
0000
0400-
43FF
0000
0400-
83FF
001
0000
0400-
13FF
0000
0400-
23FF
0000
0400-
43FF
0000
0400-
83FF
010
0000
0400-
13FF
0000
0400-
23FF
0000
0400-
43FF
0000-
3FFF
0400-
43FF
011
0000
0400-
13FF
0000
0400-
23FF
0000-
1FFF
0400-
23FF
0000-
5FFF
0400-
23FF
100
0000
0400-
13FF
0000-
0FFF
0400-
13FF
0000-
2FFF
0400-
13FF
0000-
6FFF
0400-
13FF
101
0000-
07FF
0400-
0BFF
0000-
17FF
0400-
0BFF
0000-
37FF
0400-
0BFF
0000-
77FF
0400-
0BFF
110
0000-
0BFF
0400-
07FF
0000-
1BFF
0400-
07FF
0000-
3BFF
0400-
07FF
0000-
7BFF
0400-
07FF
111
(default)
0000-
0FFF
0000-
1FFF
0000-
3FFF
0000-
7FFF
NOTE: Program Memory accesses above the highest listed address will
access external Program Memory.
It is important to note that the Flash Memory is readable
and writable by the user through the MOVX instruction
when configured as either Program or Data Memory (via
the MXWS bit in the MWS SFR 8Fh). This flexibility means
that the device can be partitioned for maximum Flash
Program Memory size (no Flash Data Memory) and Flash
Program Memory can be used as Flash Data Memory.
However, this configuration may lead to undesirable
behavior if the PC points to an area of Flash Program
Memory that is being used for data storage. Therefore, it
is recommended to use Flash partitioning when Flash
Memory is used for data storage. Flash partitioning
prohibits execution of code from Data Flash Memory.
Additionally, the Program Memory erase/write can be
disabled through hardware configuration bits (HCR0),
while still providing access (read/write/erase) to Data
Flash Memory.
The effect of memory mapping on Program and Data
Memory is straightforward. The Program Memory is
decreased in size from the top of internal Program
Memory. Therefore, for example, if the MSC1213Y5 is
partitioned with 31kB of Flash Program Memory and 1kB
of Flash Data Memory, external Program Memory
execution will begin at 7C00h (versus 8000h for 32kB).
The Flash Data Memory is added on top of the SRAM
memory. Thus, access to Data Memory (through MOVX)
will access SRAM for addresses 0000h03FFh and
access Flash Memory for addresses 0400h07FFh.
Data Memory
The MSC1211/12/13/14 can address 64kB of Data
Memory. Scratchpad Memory provides 256 bytes in
addition to the 64kB of Data Memory. The MOVX
instruction is used to access the Data SRAM Memory. This
includes 1024 bytes of on-chip Data SRAM Memory. The
data bus values do not appear on Port 0 (during data bus
timing) for internal memory access.
The MSC1211/12/13/14 also have on-chip Flash Data
Memory which is readable and writable (depending on
Memory Write Select register) during normal operation (full
VDD range). This memory is mapped into the external Data
Memory space directly above the SRAM.
The MOVX instruction is used to write to Flash Memory.
Flash Memory must be erased before it can be written.
Flash Memory is erased in 128 byte pages.
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| MSC1211Y4PAGR | 8-BIT, FLASH, 40 MHz, MICROCONTROLLER, PQFP64 |
| MSC1212Y4PAGRG4 | 8-BIT, FLASH, 40 MHz, MICROCONTROLLER, PQFP64 |
| MSC1212Y5PAGR | 8-BIT, FLASH, 40 MHz, MICROCONTROLLER, PQFP64 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MSC1211Y3PAGRG4 | 功能描述:數(shù)據(jù)轉(zhuǎn)換系統(tǒng) 8051 CPU w/ 8kB Mem 24B ADC & Quad 16B RoHS:否 制造商:Texas Instruments 轉(zhuǎn)換速率:0.001 MSPs 分辨率:24 bit 最大工作溫度:+ 125 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TQFP-64 封裝:Reel |
| MSC1211Y3PAGT | 功能描述:數(shù)據(jù)轉(zhuǎn)換系統(tǒng) Precision ADC & DACs w/8051 CPU & Flash RoHS:否 制造商:Texas Instruments 轉(zhuǎn)換速率:0.001 MSPs 分辨率:24 bit 最大工作溫度:+ 125 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TQFP-64 封裝:Reel |
| MSC1211Y3PAGTG4 | 功能描述:數(shù)據(jù)轉(zhuǎn)換系統(tǒng) 8051 CPU w/ 8kB Mem 24B ADC & Quad 16B RoHS:否 制造商:Texas Instruments 轉(zhuǎn)換速率:0.001 MSPs 分辨率:24 bit 最大工作溫度:+ 125 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TQFP-64 封裝:Reel |
| MSC1211Y4 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:Precision Analog-to-Digital Converter (ADC) and Digital-to-Analog Converters (DACs) with 8051 Microcontroller and Flash Memory |
| MSC1211Y4PAGR | 功能描述:數(shù)據(jù)轉(zhuǎn)換系統(tǒng) Precision ADC & DACs w/8051 CPU & Flash RoHS:否 制造商:Texas Instruments 轉(zhuǎn)換速率:0.001 MSPs 分辨率:24 bit 最大工作溫度:+ 125 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TQFP-64 封裝:Reel |
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