參數(shù)資料
型號(hào)： MSB1218ART1
廠商： Motorola, Inc.
英文描述： PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
中文描述： 進(jìn)步黨通用放大器三極管表面貼裝
文件頁(yè)數(shù)： 1/6頁(yè)
文件大小： 156K
代理商： MSB1218ART1
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
This PNP Silicon Epitaxial Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC–70/SOT–323 package
which is designed for low power surface mount applications.
High hFE, 210–460
Low VCE(sat), < 0.5 V
Available in 8 mm, 7–inch/3000 Unit Tape and Reel
MAXIMUM RATINGS
(TA = 25
°
C)
Rating
Symbol
Value
Unit
Collector–Base Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
IC(P)
45
Vdc
Collector–Emitter Voltage
45
Vdc
Emitter–Base Voltage
7.0
Vdc
Collector Current — Continuous
100
mAdc
Collector Current — Peak
200
mAdc
DEVICE MARKING
MSB1218A–RT1 = BR
MSB1218A–ST1 = BS
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation(1)
PD
TJ
Tstg
150
mW
Junction Temperature
150
°
C
Storage Temperature Range
–55 ~ +150
°
C
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage (IC = 10
μ
Adc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 10
μ
Adc, IE = 0)
Collector–Base Cutoff Current (VCB = 20 Vdc, IE = 0)
Collector–Emitter Cutoff Current (VCE = 10 Vdc, IB = 0)
DC Current Gain(2)
(VCE = 10 Vdc, IC = 2.0 mAdc)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
ICEO
hFE1
45
—
Vdc
45
—
Vdc
7.0
—
Vdc
—
0.1
μ
A
—
100
μ
A
MSB1218A–RT1
MSB1218A–ST1
210
290
340
460
—
—
Collector–Emitter Saturation Voltage(2)
(IC = 100 mAdc, IB = 10 mAdc)
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width
≤
300
μ
s, D.C.
≤
2%.
VCE(sat)
—
0.5
Vdc
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MSB1218A–RT1/D
SEMICONDUCTOR TECHNICAL DATA
PNP GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
CASE 419–02, STYLE 3
SC–70/SOT–323
Motorola Preferred Devices
1
2
3
COLLECTOR
3
1
BASE
2
EMITTER
REV 1
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參數(shù)描述
MSB1218A-RT1 功能描述:兩極晶體管 - BJT 100mA 45V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MSB1218A-RT1G 功能描述:兩極晶體管 - BJT 100mA 45V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MSB1218A-ST1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
MSB1224MD-3W 制造商:MORNSUN 制造商全稱:MORNSUN 功能描述:DUAL/SINGLE OUTPUT DIP DC-DC CONVERTER
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