參數(shù)資料
型號: MSASC25W45KR
廠商: MICROSEMI CORP
元件分類: 參考電壓二極管
英文描述: LOW LEAKAGE SCHOTTKY DIODE
中文描述: 25 A, 45 V, SILICON, RECTIFIER DIODE
文件頁數(shù): 1/2頁
文件大小: 77K
代理商: MSASC25W45KR
MSASC25W45K
(1N6816)
MSASC25W45KR
(1N6816R)
45 Volts
25 Amps
Features
Tungsten schottky barrier
Oxide passivated structure for very low leakage currents
Guard ring protection for increased reverse energy capability
Epitaxial structure minimizes forward voltage drop
Hermetically sealed, low profile ceramic surface mount power package
Low package inductance
Very low thermal resistance
Available as standard polarity (strap-to-anode, 1N6816) and reverse
polarity (strap-to-cathode: 1N6816R)
DESCRIPTION
SYMBOL
MAX.
UNIT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc
145
°
C
derating, forward current, Tc
145
°
C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
Peak Repetitive Reverse Surge Current, tp= 1
μ
s, f= 1kHz
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case: 1N6816
1N6816R
V
RRM
V
RWM
V
R
I
F(ave)
dI
F
/dT
I
FSM
I
RRM
T
j
T
stg
θ
JC
45
45
45
25
(3.3)
125
2
Volts
Volts
Volts
Amps
Amps/
°
C
Amps
Amp
°
C
°
C
°
C/W
-55 to +175
-55 to +175
1.25
1.35
Maximum Ratings @ 25
°
C (unless otherwise specified)
Mechanical Outline
ThinKey2
Datasheet# MSC1033A
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
LOW LEAKAGE
SCHOTTKY DIODE
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