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參數(shù)資料
| 型號： | MS3024 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, M210, STRIPAC-2 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 125K |
| 代理商： | MS3024 |
MS3024
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
The MS3024 is a common base hermetically sealed silicon NPN
microwave transistor that utilizes a fishbone emitter ballasted
geometry with a refractory/gold metallization system. This device is
capable of withstanding an infinite load VSWR at any phase angle
under rated conditions. The MS3024 was designed for Class C
amplifier applications in the 1.0 – 2.0 GHz frequency range.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
VCC
Collector-Supply Voltage
35
V
IC
Device Current
1
A
PDISS
Power Dissipation
29
W
TJ
Junction Temperature
200
°°C
TSTG
Storage Temperature
–65 to +200
°°C
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
6
°°C/W
Features
EMITTER BALLASTED
INFINITE VSWR CAPABILITY AT RATED CONDITIONS
REFRACTORY/GOLD METALLIZATION
HERMETIC STRIPAC PACKAGE
P
OUT = 5.0 W MIN. WITH 7.0 dB GAIN AT 2.0 GHz
RF AND MICROWAVE TRANSISTORS
GENERAL PURPOSE AMPLIFIER APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
相關PDF資料 |
PDF描述 |
|---|---|
| MS3102 | L BAND, Si, NPN, RF POWER TRANSISTOR |
| MS3154 | L BAND, Si, NPN, RF POWER TRANSISTOR |
| MS3103 | L BAND, Si, NPN, RF POWER TRANSISTOR |
| MS3151 | L BAND, Si, NPN, RF POWER TRANSISTOR |
| MS3152 | L BAND, Si, NPN, RF POWER TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MS3024B | 制造商:Calogic LLC 功能描述: |
| MS303 | 制造商:Schaffner 功能描述:ISOLATOR |
| MS304 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:3 Amp Schottky Rectifier |
| MS305 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:3 Amp Schottky Rectifier |
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