參數(shù)資料
型號(hào): MS2212
元件分類: 功率晶體管
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封裝: 0.310 X 0.310 INCH, HERMETIC SEALED, M222, 2 PIN
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 187K
代理商: MS2212
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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MS2212
ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25°°C)
C)
STATIC
Value
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
BVCBO
IC = 10 mA
IE = 0 mA
55
----
V
BVCER
IC = 10 mA
RBE = 10
55
----
V
BVEBO
IE = 1 mA
IC = 0 mA
3.5
----
V
ICES
VCE = 28 V
VBE = 0 V
----
2.0
mA
hFE
VCE = 5 V
IC = 500mA
15
----
150
----
DYNAMIC
Value
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
POUT
f = 960 - 1215 MHz PIN = 2.3 W
VCC = 28 V
15
----
W
ηη
C
f = 960 - 1215 MHz PIN = 2.3 W
VCC = 28 V
45
49
----
%
GP
f = 960 - 1215 MHz PIN = 2.3 W
VCC = 28 V
8.1
8.9
----
dB
Note:
Pulse Format: 6.4
S on 6.6 S off, repeat for 3.3 ms.
Duty Cycle: Burst 49.2%, overall 20.8%
IMPEDANCE DATA:
FREQUENCY
Zin
Zcl
960 MHz
5.7 + j4.3
5.7 + j7.7
1090 MHz
5.8 + j2.5
4.3 + j6.5
1215 MHz
5.0 + j3.0
4.0 + j4.8
PIN = 2.3W
VCC = 28V
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