參數(shù)資料
型號: MS1509
元件分類: 功率晶體管
英文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: 0.400 X 0.425 INCH, M168, 8 PIN
文件頁數(shù): 1/3頁
文件大小: 94K
代理商: MS1509
MS1509.PDF 5-28-03
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MS1509
DESCRIPTION:
The MS1509 is a 28 V gold metallized, Class C epitaxial silicon
NPN planar transistor designed for UHF military and commercial
equipment. The MS1508 is an internally matched, broadband
device optimized for operation within the 100 – 500 MHz fre-
quency range. This device utilizes diffused emitter resistors
to achieve 5:1 VSWR load mismatch capability at rated
operating conditions.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
33
V
VCES
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
4.0
V
IC
Device Current
15
A
PDISS
Power Dissipation
260
W
TJ
Junction Temperature
+200
°°C
TSTG
Storage Temperature
-65 to +150
°°C
Thermal Data
RTH(J-C)
Thermal Resistance Junction-case
0.67
°°C/W
Features
500 MHz
28 VOLTS
POUT = 100 WATTS
G
P = 5.5 dB GAIN MINIMUM
EFFICIENCY 55%
GOLD METALLIZATION
COMMON EMITTER CONFIGURATION
RF & MICROWAVE TRANSISTORS
TV/LINEAR APPLICATIONS
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