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參數(shù)資料
| 型號(hào)： | MS1076B |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.500 INCH, PLASTIC, M174, FM-4 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 0K |
| 代理商： | MS1076B |
MS1076
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BVCES
IC = 100 mA
70
---
V
BVCEO
IC = 200 mA
35
---
V
BVEBO
IE = 20 mA
4.0
---
V
ICEO
VCE = 30 V
---
5
mA
ICES
VCE = 35 V
---
5
mA
HFE
VCE = 5 V,
IC = 7 A
15
---
60
---
DYNAMIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
POUT
f = 30 MHz
VCE = 28 V
ICQ = 750 mA
220
---
WPEP
GP
f = 30 MHz
VCE = 28 V
ICQ = 750 mA
12
---
dB
η
C
f = 30 MHz
VCE = 28 V
ICQ = 750 mA
40
---
%
IMD
f = 30 MHz
VCE = 28 V
ICQ = 750 mA
---
-30
dBc
COB
f = 1 MHz
VCB = 28 V
---
450
---
pf
Conditions
f1 = 30.000 MHz
f2 = 30.001 MHz
HFE BINNING (marked on lid with appropriate letter):
A = 15-19
D = 27-32
G = 45-50
B = 19-22.5
E = 32-38
H = 50-55
C = 22.5-27
F = 38-45
I = 55-60
IMPEDANCE DATA
FREQ
ZIN
ZCL
30 MHz
1.2 + j0.41
1.25 + j1.92
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MS1076E | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MS1076D | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MS1076G | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MS1076I | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MS1076H | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MS1076C | 制造商:Microsemi Corporation 功能描述:MS1076C - Bulk |
| MS1077 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RF & MICROWAVE TRANSISTORS |
| MS1078 | 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MS1079 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
| MS108 | 制造商:Microsemi Corporation 功能描述:SCHOTTKY 80V 1A 2PIN DO-41 - Bulk |
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