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參數(shù)資料
| 型號(hào)： | MS1051 |
| 元件分類： | 功率晶體管 |
| 英文描述： | HF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | PLASTIC, M174, 4 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 88K |
| 代理商： | MS1051 |
MS1051
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
The MS1051 is a 12.5 V Class C epitaxial silicon NPN planar
transistor designed primarily for HF communications. This
device utilizes state-of-the-art diffused emitter ballasting to
achieve extreme ruggedness under severe operating
conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25
°C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
36
V
VCEO
Collector-Emitter Voltage
18
V
VEBO
Emitter-Base Voltage
4.0
V
IC
Device Current
20
A
PDISS
Power Dissipation
290
W
TJ
Junction Temperature
+200
°C
TSTG
Storage TEmperature
-65 to +150
°C
THERMAL DATA
RTH(J-C)
Thermal Resistance Junction-case
0.6
°C/W
Features
30 MHz
12.5 VOLTS
P
OUT = 100 WATTS
G
PE = 12.0 dB MINIMUM
IMD = –30 dBc
GOLD METALLIZATION
COMMON EMITTER CONFIGURATION
RF & MICROWAVE TRANSISTORS
HF SSB APLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
Rev A 11/2005
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MS1076A | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MS1076B | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MS1076E | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MS1076D | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MS1076G | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MS-105-1 | 制造商:RRE 制造商全稱:RRE 功能描述:Micro-miniature Reed Sensor |
| MS-105-2 | 制造商:RRE 制造商全稱:RRE 功能描述:Micro-miniature Reed Sensor |
| MS-105-3 | 制造商:PIC 制造商全稱:PIC 功能描述:Miniature Reed Sensor - pitch 12.70 mm |
| MS-105-3-1 | 制造商:PIC 制造商全稱:PIC 功能描述:Miniature Reed Sensor - pitch 12.70 mm |
| MS-105-3-2 | 制造商:PIC 制造商全稱:PIC 功能描述:Miniature Reed Sensor - pitch 12.70 mm |
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