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參數(shù)資料
| 型號(hào)： | MRFG35030R5 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET |
| 封裝： | CASE 1490-01, 2 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 378K |
| 代理商： | MRFG35030R5 |
MRFG35030R5
MOTOROLA RF DEVICE DATA
DC CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
Off State Drain Current
(VDS = 3.5 Vdc, VGS = -2 Vdc)
IDSO
—
15
425
Adc
Off State Current
(VDS = 28.5 Vdc, VGS = -2.5 Vdc)
IDSX
—
5
42.5
mAdc
Gate-Source Cut-off Voltage
(VDS = 3.5 Vdc, IDS = 1 mA/mm)
VGS(th)
-0.7
-0.85
-1.1
Vdc
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (1) VDD = 12 Vdc, IDQ = 650 mA, Pout = 3 W Avg., f = 3550 MHz,
Single-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
10
12
—
dB
Drain Efficiency
ηD
17
21
—
%
Adjacent Channel Power Ratio
ACPR
—
-41
-36
dBc
TYPICAL RF PERFORMANCE (In Motorola Test Fixture, 50 οhm system) VDD = 12 Vdc, IDQ = 650 mA, f = 3550 MHz
Output Power, 1 dB Compression Point, CW
P1dB
—
30
—
W
(1) Measurements made with device in test fixture.
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