參數(shù)資料
型號(hào): MRFG35030R5
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET
封裝: CASE 1490-01, 2 PIN
文件頁數(shù): 8/12頁
文件大?。?/td> 259K
代理商: MRFG35030R5
MRFG35030R5
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
ηD
45
6
16
20
0
50
Gps
Pout, OUTPUT POWER (dBm)
Figure 3. SingleCarrier WCDMA Power Gain
and Drain Efficiency versus Output Power
G
ps
,POWER
GAIN
(dB)
,DRAIN
EFFICIENCY
(%)
η
D
VDD = 12 Vdc, IDQ = 650 mA, f = 3550 MHz
Single-Carrier W-CDMA
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
14
40
12
30
10
20
810
25
30
35
40
45
-60
-10
20
-25
0
IRL
ACPR
Pout, OUTPUT POWER (dBm)
Figure 4. SingleCarrier WCDMA Adjacent
Channel Power Ratio and Input Return Loss
versus Output Power
ACPR,
ADJACENT
CHANNEL
POWER
RA
TIO
(dBc)
INPUT
RETURN
LOSS
(dB)
IRL,
VDD = 12 Vdc, IDQ = 650 mA, f = 3550 MHz
Single-Carrier W-CDMA
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
-20
-5
-30
-10
-40
-15
-50
-20
25
30
35
40
10
0.0001
100
0
PEAK-TO-AVERAGE (dB)
Figure 5. CCDF WCDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, SingleCarrier Test Signal
10
1
0.1
0.01
0.001
24
68
PROBABILITY
(%)
Figure 6. Single-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
(dB)
3.6
0
-10
-40
-50
-60
-70
-80
-20
Span 20 MHz
-30
-90
-96.4
3.84 MHz
Channel BW
+ACPR @
3.84 MHz BW
-ACPR @
3.84 MHz BW
2 MHz
Center 3.55 GHz
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