參數(shù)資料
型號: MRFE6VP8600HSR5
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-1230S, CASE 375E-04, 4 PIN
文件頁數(shù): 17/20頁
文件大?。?/td> 777K
代理商: MRFE6VP8600HSR5
6
RF Device Data
Freescale Semiconductor
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
TYPICAL CHARACTERISTICS — 860 MHz
IDS(Q) = 100 mA
Figure 4. Normalized VGS Quiescent versus
Case Temperature
NO
RM
AL
IZ
ED
V GS
(Q)
3.3
0
10
2.1
2.3
2.2
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 5. Drain Current versus Gate--Source Voltage
2.4
9
4
VDD =50 Vdc
Note: Measured with both sides of the transistor tied together.
TC, CASE TEMPERATURE (°C)
1.06
1.05
1.04
1.02
1.01
1.03
1
0.99
0.98
0.97
0.96
0.95
0.94
100
--50
0
--25
25
50
75
1400 mA
1900 mA
2400 mA
VDD =50 Vdc
8
7
6
5
2
3
1
2.6
2.5
2.7
2.9
2.8
3
3.1 3.2
I DD
,DRA
IN
CURRE
NT
(A
M
PS
)
40 Vdc
30 Vdc
20 Vdc
10 Vdc
50
1
1000
020
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance versus Drain--Source Voltage
C,
CA
PA
CIT
ANCE
(pF
)
30
100
10
40
Coss
Measured with ±30 mV(rms)ac @ 1 MHz
VGS =0 Vdc
Note: Each side of device measured separately.
Crss
50
64
32
62
Pin, INPUT POWER (dBm)
Figure 7. Pulsed CW Output Power versus
Input Power
60
43
58
36
37
38
39
40
41
42
P out
,O
UT
PU
T
POWER
(d
Bm)
P3dB = 59.0 dBm (794 W)
Actual
Ideal
P2dB = 58.8 dBm (759 W)
VDD =50 Vdc,IDQ = 1400 mA, f = 860 MHz
Pulse Width = 100 μsec, Duty Cycle = 10%
56
54
34
35
33
P1dB = 58.4 dBm (692 W)
52
Figure 8. Pulsed Power Gain and Drain Efficiency
versus Output Power
Pout, OUTPUT POWER (WATTS) PULSED
G
ps
,P
OWER
GAIN
(d
B)
16
22
10
19
21
20
100
1000
ηD
Gps
18
17
VDD =50 Vdc,IDQ = 1400 mA
f = 860 MHz
Pulse Width = 100 μsec
Duty Cycle = 10%
0
60
50
20
40
30
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
10
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