參數(shù)資料
型號: MRFE6VP6300HSR5
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN
文件頁數(shù): 6/15頁
文件大小: 991K
代理商: MRFE6VP6300HSR5
14
RF Device Data
Freescale Semiconductor
MRFE6VP6300HR3 MRFE6VP6300HSR3
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
NI--780--4 = R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
NI--780S--4 = R5 Suffix = 50 Units, 32 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRFE6VP6300H and MRFE6VP6300HS parts will be available for 2 years after release of
MRFE6VP6300H and MRFE6VP6300HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be
delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5
tape and reel option will be offered MRFE6VP6300H and MRFE6VP6300HS in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Oct. 2010
Initial Release of Data Sheet
1
July 2011
Corrected pin 4 label from RFout/VGS to RFin/VGS, Fig. 1, Pin Connections, p. 1
Changed Drain--Source voltage from --0.5, +125 to --0.5, +130 in Maximum Ratings table, p. 1
Added Total Device Dissipation to Maximum Ratings table, p. 1
Changed V(BR)DSS Min value from 125 to 130 Vdc, Table 4, Off Characteristics, p. 2
Tightened VGS(th) Min limit from 1.5 to 1.7 Vdc and Max limit from 3.0 to 2.7 Vdc as a result of process
improvement, Table 4, On Characteristics, p. 2
Tightened VGS(Q) Min limit from 1.7 to 2.0 Vdc and Max limit from 3.2 to 3.0 Vdc as a result of process
improvement, Table 4, On Characteristics, p. 2
Added Load Mismatch table to Table 4. Electrical Characteristics, p. 2
MTTF end temperature on graph changed to match maximum operating junction temperature, Fig. 14,
MTTF versus Junction Temperature, p. 7
Added Fig. 16, Simulated Source and Load Impedances Optimized for IRL, Output Power and Drain
Efficiency — Push--Pull table, p. 9
相關(guān)PDF資料
PDF描述
MRFE6VP6300HSR3 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRFE6VP8600HSR5 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRFE6VP8600HSR6 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRFE6VP8600HR5 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRFE6VP8600HR6 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRFE6VP8600H 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
MRFE6VP8600HR5 功能描述:射頻MOSFET電源晶體管 VHV6 600W NI1230H 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRFE6VP8600HR6 功能描述:射頻MOSFET電源晶體管 VHV6 600W NI1230H 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRFE6VP8600HSR5 功能描述:射頻MOSFET電源晶體管 VHV6 600W NI1230S 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRFE6VP8600HSR6 功能描述:射頻MOSFET電源晶體管 VHV6 600W NI1230S 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray