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參數(shù)資料
| 型號(hào)： | MRFE6VP61K25HSR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-1230S, CASE 375E-04, 4 PIN |
| 文件頁(yè)數(shù)： | 9/13頁(yè) |
| 文件大?。?/td> | 928K |
| 代理商： | MRFE6VP61K25HSR6 |
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MRFE6VP61K25HR6 MRFE6VP61K25HSR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
50
10
2000
020
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
C,
CA
PA
CIT
ANCE
(pF
)
30
Ciss
1000
100
40
Coss
Measured with ±30 mV(rms)ac @ 1 MHz
VGS =0 Vdc
Note: Each side of device measured separately.
1
59
66
35
Pin, INPUT POWER (dBm) PULSED
Figure 5. Pulsed Output Power versus
Input Power
64
36
37
38
39
40
41
42
P out
,O
UT
PU
T
POWER
(d
Bm)
PU
LSED
63
60
Actual
Ideal
VDD =50 Vdc,IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 μsec, 20% Duty Cycle
P1dB = 61.3 dBm
(1333 W)
62
61
65
P3dB = 61.9 dBm (1553 W)
P2dB = 61.7 dBm (1472 W)
26
30
90
100
24
70
50
Pout, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
,P
OWER
GAIN
(d
B)
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
22
20
2000
21
40
60
80
23
25
16
23
0
20
19
Pout, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus
Output Power
G
ps
,P
OWER
GAIN
(d
B)
200
18
1400 1600
VDD =50 Vdc,IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 μsec, 20% Duty Cycle
17
400
800
1000
1200
VDD =30 V
50 V
21
22
25
24
26
600
35 V
40 V
45 V
20
90
0
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Drain Efficiency versus
Output Power
70
200
400
600
800
1000
1200
1400
60
30
50
40
80
1600
Figure 9. Pulsed Power Gain and Drain Efficiency
versus Output Power
Pout, OUTPUT POWER (WATTS) PULSED
G
ps
,P
OWER
GAIN
(d
B)
19
21
20
100
2000
ηD
25_C
TC =--30_C
85_C
Gps
VDD =50 Vdc,IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 μsec, 20% Duty Cycle
40
60
50
20
30
η
D
,DRA
IN
EF
FI
CIE
NCY
(%
)
--30_C
25_C
85_C
VDD =50 Vdc,IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 μsec, 20% Duty Cycle
VDD =30 V
50 V
35 V
40 V
45 V
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
24
23
22
26
25
70
80
90
Crss
1000
ηD
Gps
VDD =50 Vdc,IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 μsec, 20% Duty Cycle
2000
1000
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRFE6VP6300HR3 | 功能描述:射頻MOSFET電源晶體管 VHV6 300W50VISM NI780H-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6VP6300HR3_11 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRFE6VP6300HR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 300W50VISM NI780H-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6VP6300HSR3 | 功能描述:射頻MOSFET電源晶體管 VHV6 300W50VISM NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6VP6300HSR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 300W50VISM NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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