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參數(shù)資料
| 型號： | MRFE6VP5600HSR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-1230S, CASE 375E-04, 4 PIN |
| 文件頁數(shù)： | 10/13頁 |
| 文件大?。?/td> | 930K |
| 代理商： | MRFE6VP5600HSR6 |
6
RF Device Data
Freescale Semiconductor
MRFE6VP5600HR6 MRFE6VP5600HSR6
TYPICAL CHARACTERISTICS
250
109
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. MTTF versus Junction Temperature — CW
This above graph displays calculated MTTF in hours when the device
is operated at VDD =50 Vdc,Pout = 600 W Avg., and ηD = 75.2%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
104
110
130
150
170
190
MTTF
(H
OU
RS
)
210
230
108
105
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRFE6VP61K25GSR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 1.25KW ISM NI1230GS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6VP61K25HR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 1.25KW ISM NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6VP61K25HR5-CUT TAPE | 制造商:Freescale 功能描述:MRFE6VP Series 600 MHz 1250 W 50 V N-Channel RF Power MOSFET - CASE 375D-5 |
| MRFE6VP61K25HR6 | 功能描述:射頻MOSFET電源晶體管 VHV6 1.25KW ISM NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6VP61K25HR6_11 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors Enhancement--Mode Lateral MOSFETs |
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