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參數(shù)資料
| 型號： | MRFE6S9205HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN |
| 文件頁數(shù)： | 12/12頁 |
| 文件大?。?/td> | 404K |
| 代理商： | MRFE6S9205HR3 |
MRFE6S9205HR3 MRFE6S9205HSR3
9
RF Device Data
Freescale Semiconductor
Zo = 5 Ω
Zload
Zsource
f = 980 MHz
f = 820 MHz
VDD = 28 Vdc, IDQ = 1400 mA, Pout = 58 W Avg.
f
MHz
Zsource
W
Zload
W
820
1.80 - j4.00
1.75 - j0.73
840
1.88 - j3.76
1.68 - j0.69
860
1.64 - j3.65
1.57 - j0.64
880
1.54 - j3.41
1.44 - j0.58
900
1.35 - j3.13
1.33 - j0.51
920
1.37 - j2.89
1.21 - j0.40
940
1.37 - j2.66
1.07 - j0.27
960
1.39 - j2.53
0.92 - j0.13
980
1.25 - j2.33
0.74 + j0.01
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Figure 15. Series Equivalent Source and Load Impedance
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
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| MRFE6S9205HR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9205HSR3 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9205HSR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6VP100H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power LDMOS Transistors |
| MRFE6VP100HR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 100W 50V ISM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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