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參數(shù)資料
| 型號： | MRFE6S9201HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 465-06, NI-780, 3 PIN |
| 文件頁數(shù)： | 4/13頁 |
| 文件大?。?/td> | 487K |
| 代理商： | MRFE6S9201HR3 |
12
RF Device Data
Freescale Semiconductor
MRFE6S9201HR3 MRFE6S9201HSR3
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2007
Initial Release of Data Sheet
1
Dec. 2008
Updated Typical Performance Full Frequency Band to f = 880 MHz to match production test, p. 1
Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 5
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PDF描述 |
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| MRFE6S9205HSR3 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRFE6S9205HR3 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRFE6VP5600HSR6 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRFE6VP5600HR6 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRFE6VP5600HR5 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRFE6S9201HR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9201HSR3 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9201HSR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9205HR3 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9205HR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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