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參數(shù)資料
| 型號(hào)： | MRFE6S9125NR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| 封裝： | ROHS COMPLIANT, PLASTIC, WB-4, CASE-1486-03, 4 PIN |
| 文件頁數(shù)： | 2/18頁 |
| 文件大?。?/td> | 594K |
| 代理商： | MRFE6S9125NR1 |
10
RF Device Data
Freescale Semiconductor
MRFE6S9125NR1 MRFE6S9125NBR1
f = 860 MHz
Figure 16. Series Equivalent Source and Load Impedance
f
MHz
Zsource
Ω
Zload
Ω
860
865
870
1.48 - j0.14
1.66 - j0.02
1.56 - j0.09
0.62 - j2.13
0.64 - j2.31
0.62 - j2.45
VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg.
875
880
1.74 + j0.11
1.73 + j0.04
0.59 - j2.43
0.57 - j2.42
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
885
890
895
1.68 + j0.19
1.52 + j0.33
1.61 + j0.25
0.54 - j2.36
0.57 - j2.18
0.58 - j1.94
900
1.48 + j0.37
0.59 - j1.86
Zo = 5 Ω
f = 900 MHz
Zsource
f = 900 MHz
f = 860 MHz
Zload
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| MRFE6S9130HR3 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9130HR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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| MRFE6S9130HSR3 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9130HSR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 130W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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