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參數(shù)資料
| 型號(hào)： | MRFE6S8046NR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB-4, 4 PIN |
| 文件頁數(shù)： | 14/17頁 |
| 文件大?。?/td> | 439K |
| 代理商： | MRFE6S8046NR1 |
6
RF Device Data
Freescale Semiconductor
MRFE6S8046NR1 MRFE6S8046GNR1
TYPICAL CHARACTERISTICS
η
D
,DRAIN
EFFICIENCY
(%)
10
70
10
20
30
50
100
40
IRL,
INPUT
RETURN
LOSS
(dB)
870
IRL
Gps
f, FREQUENCY (MHz)
Figure 4. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 35.5 Watts CW
16
8
10
12
14
17
22
42
62
60
58
56
52
50
48
46
G
ps
,POWER
GAIN
(dB)
880
890
900
910
920
930
940
970
54
44
18
η
D
,DRAIN
EFFICIENCY
(%)
VDD = 28 Vdc
Pout = 35.5 W CW
IDQ = 300 mA
IRL,
INPUT
RETURN
LOSS
(dB)
Gps
f, FREQUENCY (MHz)
Figure 5. Power Gain, Input Return Loss, EVM and Drain
Efficiency versus Frequency @ Pout = 17.8 Watts Avg.
18
10
12
14
16
17
22
1
48
46
44
42
6
5
4
3
G
ps
,POWER
GAIN
(dB)
40
2
20
VDD = 28 Vdc, Pout = 17.8 W (Avg.)
IDQ = 285 mA, EDGE Modulation
TWOTONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Two-Tone Spacing
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
EVM
EVM,
ERROR
VECT
OR
MAGNITUDE
(%
rms)
IM3U
IM3L
IM5U
IM5L
IM7L
IM7U
VDD = 28 Vdc, Pout = 41 W (PEP), IDQ = 300 mA
TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
ηD
17.5
21.5
21
20.5
19
18.5
18
20
19.5
21.5
21
20.5
20
19.5
19
18.5
18
17.5
60
1
950
960
870
880
890
900
910
920
930
940
970
950
960
ηD
IRL
0
70
16
21
0
75
VDD = 28 Vdc
IDQ = 300 mA
f = 880 MHz
10
1
18
17
30
15
Pout, OUTPUT POWER (WATTS) CW
Figure 7. Power Gain and Drain Efficiency
versus Output Power
G
ps
,POWER
GAIN
(dB)
Gps
20
19
60
45
η
D
,DRAIN
EFFICIENCY
(%)
ηD
894 MHz
864 MHz
880 MHz
894 MHz
864 MHz
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參數(shù)描述 |
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| MRFE6S9045GNR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 45W TO270-2G RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9045N | 制造商:Freescale Semiconductor 功能描述: |
| MRFE6S9045NR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 45W NI270-2 FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9045NR1-CUT TAPE | 制造商:Freescale 功能描述:MRFE6S9045 Series 880 MHz 10 W 28 V N-Channel RF Power MOSFET |
| MRFE6S9046GNR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 45W GSM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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