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參數(shù)資料
| 型號： | MRFE6P3300HR5 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 423K |
| 代理商： | MRFE6P3300HR5 |
6
RF Device Data
Freescale Semiconductor
MRFE6P3300HR3 MRFE6P3300HR5
TYPICAL NARROWBAND CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
70
10
7th Order
Pout, OUTPUT POWER (WATTS) PEP
3rd Order
20
30
40
50
100
600
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
60
5th Order
1
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
70
10
1
TWO TONE SPACING (MHz)
VDD = 32 Vdc, Pout = 150 W (PEP), IDQ = 1600 mA
Two Tone Measurements
(f1 + f2)/2 = Center Frequency of 860 MHz
20
30
40
50
10
80
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
Figure 9. Pulsed CW Output Power versus
Input Power
42
63
34
Pin, INPUT POWER (dBm)
61
59
57
53
36
38
40
Actual
Ideal
32
P
out
,OUTPUT
POWER
(dBm)
55
60
58
56
54
33
35
37
39
41
62
P1dB = 55.15 dBm
(327.9 W)
P3dB = 55.9 dBm
(388.37 W)
P6dB = 56.28 dBm
(424.38 W)
ACPR,
ADJACENT
CHANNEL
POWER
RA
TIO
(dBc)
Figure 10. Single-Carrier DVBT OFDM ACPR, Power
Gain and Drain Efficiency versus Output Power
15
70
Pout, OUTPUT POWER (WATTS) AVG.
45
25
30
20
30
35
50
10
45
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
Gps
ACP U
VDD = 32 Vdc, IDQ = 1600 mA, f = 860 MHz
8K Mode OFDM, 64 QAM Data Carrier
Modulation, 5 Symbols
30
_C
40
1
200
35
25
40
85
_C
TC = 30_C
25
_C
ηD
VDD = 32 Vdc, IDQ = 1600 mA
f1 = 857 MHz, f2 = 863 MHz
Two Tone Measurements, 6 MHz Tone Spacing
60
IM3 L
IM3 U
IM5 L
IM5 U
IM7 U
IM7 L
VDD = 32 Vdc, IDQ = 1600 mA
Pulsed CW, 12
μsec(on), 1% Duty Cycle
f = 860 MHz
10
5
0
65
60
55
100
ACP L
30
_C
25
_C
85
_C
25
_C
85
_C
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| MRFE6P9220HR3 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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| MRFE6S8046NR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 45W GSM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9045GNR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 45W TO270-2G RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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