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參數(shù)資料
| 型號(hào)： | MRF947BT1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 419-02, 3 PIN |
| 文件頁(yè)數(shù)： | 8/14頁(yè) |
| 文件大小： | 269K |
| 代理商： | MRF947BT1 |
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3
MMBR941 MRF947 SERIES
MOTOROLA RF DEVICE DATA
PERFORMANCE CHARACTERISTICS
Conditions
Symbol
MMBR941LT1, T3
MRF947 Series
Unit
Conditions
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Insertion Gain
(VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 15 mA, f = 2.0 GHz)
|S21|2
—
14
8.0
—
14
10.8
—
dB
Maximum Unilateral Gain (1)
(VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 15 mA, f = 2.0 GHz)
GUmax
—
16
10
—
14.8
11.6
—
dB
Noise Figure — Minimum (Figure 9)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)
NFMIN
—
1.5
2.1
—
1.5
2.1
—
dB
Associated Gain at Minimum NF (Figure 9)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)
GNF
—
14
8.5
—
14
10
—
dB
Noise Figure — 50 ohm Source
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
NF50
—
1.9
2.8
—
1.9
2.8
dB
NOTE:
1. Maximum Unilateral Gain is GUmax =
|S
21
|2
,INSER
TION
GAIN
(dB)
Figure 1. Collector–Base Capacitance
versus Voltage
Figure 2. DC Current Gain versus
Collector Current
Figure 3. Gain Bandwidth Product versus
Collector Current
Figure 4. Insertion Gain versus Collector Current
TYPICAL CHARACTERISTICS
MMBR941LT1, T3; MMBR941BLT1
IC, COLLECTOR CURRENT (mA)
VCE = 6 V
f = 1 GHz
24
20
16
12
8
4
0
12
3
5
10
7
20
100
70
50
30
VCE = 6 V
f = 1 GHz
IC, COLLECTOR CURRENT (mA)
12
10
8
6
4
2
0
12
3
5
10
7
20
100
70
50
30
IC, COLLECTOR CURRENT (mA)
200
100
70
50
30
20
10
12
3
5
10
7
20
100
70
50
30
300
12
3
5
7
10
1
0.7
0.5
0.1
0.2
0.3
f T
,GAIN
BANDWIDTH
PRODUCT
(GHz)
h
FE
,DC
CURRENT
GAIN
C
CB
,CAP
ACIT
ANCE
(pF)
VCB, REVERSE VOLTAGE (V)
MMBR941LT1, T3
f = 1 MHz
|S21|2
(1
– |S11|2)(1 – |S22|2)
ARCHIVE
INFORMA
TION
ARCHIVE
INFORMA
TION
F
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sc
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I
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
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.
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