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參數(shù)資料
| 型號(hào)： | MRF9200LSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 469K |
| 代理商： | MRF9200LSR3 |
2
RF Device Data
Freescale Semiconductor
MRF9200LR3 MRF9200LSR3
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model (per JESD22-A114)
1C (Minimum)
Machine Model (per EIA/JESD22-A115)
B (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 μAdc)
VGS(th)
1.5
2.7
3.5
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 2400 mAdc)
VGS(Q)
3
3.7
4.5
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 6.0 Adc)
VDS(on)
—
0.25
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 6.7 Adc)
gfs
—
8.8
—
S
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2.5
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 2400 mA, Pout = 40 W Avg. N-CDMA,
f = 880 MHz, Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz
Offset. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
16
17.5
—
dB
Drain Efficiency
ηD
22
25
—
%
Adjacent Channel Power Ratio
ACPR
—
-46.5
-45
dBc
Input Return Loss
IRL
—
-13
-9
dB
1. Part internally matched both on input and output.
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