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參數(shù)資料
| 型號： | MRF9200LR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN |
| 文件頁數(shù)： | 11/12頁 |
| 文件大?。?/td> | 469K |
| 代理商： | MRF9200LR3 |
8
RF Device Data
Freescale Semiconductor
MRF9200LR3 MRF9200LSR3
TYPICAL CHARACTERISTICS
210
1011
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than
±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
1010
109
108
MTTF
FACT
OR
(HOURS
X
AMPS
2 )
90
110
130
150
170
190
Figure 14. MTTF Factor versus Junction Temperature
N-CDMA TEST SIGNAL
10
0.0001
100
0
PEAKTOAVERAGE (dB)
Figure 15. Single-Carrier CCDF N-CDMA
10
1
0.1
0.01
0.001
24
6
8
IS95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @
±1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
PROBABILITY
(%)
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60
110
10
(dB)
20
30
40
50
70
80
90
100
+ACPR in 30 kHz
Integrated BW
1.2288 MHz
Channel BW
2.9
0.7
2.2
1.5
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 16. Single-Carrier N-CDMA Spectrum
ACPR in 30 kHz
Integrated BW
ALT1 in 30 kHz
Integrated BW
+ALT1 in 30 kHz
Integrated BW
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF9200LR3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9200LSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9210 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistor |
| MRF9210R3 | 功能描述:射頻MOSFET電源晶體管 200W RF LDMOS NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9210R5 | 功能描述:射頻MOSFET電源晶體管 200W RF LDMOS NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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