參數(shù)資料
型號(hào)： MRF9135LSR3
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： 36K SERIAL CONFIGURATION PROM
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： NI-780S, CASE 465A-06, 2 PIN
文件頁(yè)數(shù)： 2/12頁(yè)
文件大?。?/td> 408K
代理商： MRF9135LSR3
MRF9135L MRF9135LR3 MRF9135LSR3
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C, 50 ohm system unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
10
μ
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
1
μ
Adc
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 450
μ
A)
V
GS(th)
2
2.8
4
Vdc
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 1100 mAdc)
V
GS(Q)
3
3.7
5
Vdc
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 3 Adc)
V
DS(on)
—
0.19
0.4
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 9 Adc)
g
fs
—
12
—
S
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
—
109
—
pF
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
4.4
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture) Single–Carrier N–CDMA, 1.2288 MHz Channel Bandwidth Carrier,
Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF
Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 25 W Avg. N–CDMA, I
DQ
= 1100 mA,
f = 880.0 MHz)
G
ps
16
17.8
—
dB
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 25 W Avg. N–CDMA, I
DQ
= 1100 mA,
f = 880.0 MHz)
η
22
25
—
%
Adjacent Channel Power Ratio
(V
DD
= 26 Vdc, P
out
= 25 W Avg. N–CDMA, I
DQ
= 1100 mA,
f = 880.0 MHz; ACPR @ 25 W, 1.23 MHz Bandwidth, 750 kHz
Channel Spacing)
ACPR
—
–47
–45
dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 25 W Avg. N–CDMA, I
DQ
= 1100 mA,
f = 880.0 MHz)
IRL
—
–13.5
–9
dB
Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 25 W Avg. N–CDMA, I
DQ
= 1100 mA,
f = 865 MHz and 895 MHz)
G
ps
—
17
—
dB
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 25 W Avg. N–CDMA, I
DQ
= 1100 mA,
f = 865 MHz and 895 MHz)
η
—
24
—
%
Adjacent Channel Power Ratio
(V
DD
= 26 Vdc, P
out
= 25 W Avg. N–CDMA, I
DQ
= 1100 mA,
f = 865 MHz and 895 MHz; ACPR @ 25 W, 1.23 MHz Bandwidth, 750
kHz Channel Spacing)
ACPR
—
–46
—
dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 25 W Avg. N–CDMA, I
DQ
= 1100 mA,
f = 865 MHz and 895 MHz)
IRL
—
–12.5
—
dB
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 135 W CW, I
DQ
= 1100 mA,
f = 880.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
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