參數(shù)資料
型號(hào)： MRF9135LR3
廠商： MOTOROLA INC
元件分類(lèi)： 功率晶體管
英文描述： 36K SERIAL CONFIGURATION PROM
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： NI-780, CASE 465-06, 2 PIN
文件頁(yè)數(shù)： 2/12頁(yè)
文件大小： 408K
代理商： MRF9135LR3
MRF9135L MRF9135LR3 MRF9135LSR3
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C, 50 ohm system unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
10
μ
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
1
μ
Adc
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 450
μ
A)
V
GS(th)
2
2.8
4
Vdc
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 1100 mAdc)
V
GS(Q)
3
3.7
5
Vdc
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 3 Adc)
V
DS(on)
—
0.19
0.4
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 9 Adc)
g
fs
—
12
—
S
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
—
109
—
pF
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
4.4
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture) Single–Carrier N–CDMA, 1.2288 MHz Channel Bandwidth Carrier,
Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF
Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 25 W Avg. N–CDMA, I
DQ
= 1100 mA,
f = 880.0 MHz)
G
ps
16
17.8
—
dB
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 25 W Avg. N–CDMA, I
DQ
= 1100 mA,
f = 880.0 MHz)
η
22
25
—
%
Adjacent Channel Power Ratio
(V
DD
= 26 Vdc, P
out
= 25 W Avg. N–CDMA, I
DQ
= 1100 mA,
f = 880.0 MHz; ACPR @ 25 W, 1.23 MHz Bandwidth, 750 kHz
Channel Spacing)
ACPR
—
–47
–45
dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 25 W Avg. N–CDMA, I
DQ
= 1100 mA,
f = 880.0 MHz)
IRL
—
–13.5
–9
dB
Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 25 W Avg. N–CDMA, I
DQ
= 1100 mA,
f = 865 MHz and 895 MHz)
G
ps
—
17
—
dB
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 25 W Avg. N–CDMA, I
DQ
= 1100 mA,
f = 865 MHz and 895 MHz)
η
—
24
—
%
Adjacent Channel Power Ratio
(V
DD
= 26 Vdc, P
out
= 25 W Avg. N–CDMA, I
DQ
= 1100 mA,
f = 865 MHz and 895 MHz; ACPR @ 25 W, 1.23 MHz Bandwidth, 750
kHz Channel Spacing)
ACPR
—
–46
—
dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 25 W Avg. N–CDMA, I
DQ
= 1100 mA,
f = 865 MHz and 895 MHz)
IRL
—
–12.5
—
dB
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 135 W CW, I
DQ
= 1100 mA,
f = 880.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
相關(guān)PDF資料
PDF描述
MRF9135LSR3 36K SERIAL CONFIGURATION PROM
MRF947BT1 IC QUAD VIDEO SWITCH 16-QSOP
MRF9411LT1 NPN Silicon Low Noise, High-Frequency Transistors
MRF947AT1 36K SERIAL CONFIGURATION PROM
MRF947T3 36K SERIAL CONFIGURATION PROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF9135LR5 功能描述:射頻MOSFET電源晶體管 135W 900MHZ LDMOS NI780L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF9135LSR3 功能描述:射頻MOSFET電源晶體管 RF PWR LDMOS NI780LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF9135LSR5 功能描述:射頻MOSFET電源晶體管 RF PWR LDMOS NI780LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF914 制造商:Motorola Inc 功能描述:
MRF917T1 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:LOW NOISE HIGH FREQUENCY TRANSISTOR
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*