參數(shù)資料
型號: MRF9085SR3
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: RF Power MOSFETs(RF功率MOS場效應(yīng)管)
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: NI-780S, CASE 465A-06, 3 PIN
文件頁數(shù): 3/8頁
文件大?。?/td> 151K
代理商: MRF9085SR3
3
MRF9085 MRF9085R3 MRF9085S MRF9085SR3
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS – continued
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS
(In Motorola Test Fixture)
Two–Tone Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Gps
17
17.9
dB
Two–Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
η
36
40
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
IMD
–31
–28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
IRL
9
21
dB
Two–Tone Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
Gps
17.9
dB
Two–Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
η
40.0
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
IMD
–31
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
IRL
16
dB
Power Output, 1 dB Compression Point
(VDD = 26 Vdc, CW, IDQ = 700 mA,
f1 = 880.0 MHz)
P1dB
105
W
Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 700 mA,
f1 = 880.0 MHz)
Gps
17.5
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 700 mA,
f1 = 880.0 MHz)
η
51
%
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 700 mA,
f = 880.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
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