- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369929 > MRF9085R3 (MOTOROLA INC) RF Power MOSFETs(RF功率MOS場效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號(hào)： | MRF9085R3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF Power MOSFETs(RF功率MOS場效應(yīng)管) |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-780, CASE 465-06, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 151K |
| 代理商： | MRF9085R3 |
3
MRF9085 MRF9085R3 MRF9085S MRF9085SR3
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS – continued
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS
(In Motorola Test Fixture)
Two–Tone Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Gps
17
17.9
—
dB
Two–Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
η
36
40
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
IMD
—
–31
–28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
IRL
9
21
—
dB
Two–Tone Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
Gps
—
17.9
—
dB
Two–Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
η
—
40.0
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
IMD
—
–31
—
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
IRL
—
16
—
dB
Power Output, 1 dB Compression Point
(VDD = 26 Vdc, CW, IDQ = 700 mA,
f1 = 880.0 MHz)
P1dB
—
105
—
W
Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 700 mA,
f1 = 880.0 MHz)
Gps
—
17.5
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 700 mA,
f1 = 880.0 MHz)
η
—
51
—
%
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 700 mA,
f = 880.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF9085S | RF Power MOSFETs(RF功率MOS場效應(yīng)管) |
| MRF9085SR3 | RF Power MOSFETs(RF功率MOS場效應(yīng)管) |
| MRF9135L | 36K SERIAL CONFIGURATION PROM |
| MRF9135LR3 | 36K SERIAL CONFIGURATION PROM |
| MRF9135LSR3 | 36K SERIAL CONFIGURATION PROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF9085S | 制造商:Motorola Inc 功能描述: |
| MRF9100 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF9100LR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9100LSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9100R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。