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參數(shù)資料
| 型號： | MRF9085LR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 456-06, NI-780, 2 PIN |
| 文件頁數(shù)： | 7/10頁 |
| 文件大小： | 305K |
| 代理商： | MRF9085LR3 |
6
Freescale Semiconductor
RF Product Device Data
MRF9085LR3
TYPICAL CHARACTERISTICS
80
40
60
20
0
40
IMD
Pout, OUTPUT POWER (WATTS) PEP
f, FREQUENCY (MHz)
G
ps
,POWER
GAIN
(dB)
860
18
Figure 3. Class AB Broadband Circuit Performance
14
11
Pout, OUTPUT POWER (WATTS) PEP
19
7
Figure 4. Power Gain, Efficiency, IMD versus
Output Power
1
9
1
70
Figure 5. Intermodulation Distortion Products
versus Output Power
100
10
30
60
50
40
11
13
15
13
12
VDD = 26 Vdc
Pout = 90 W (PEP)
IDQ = 700 mA
TwoTone, 100 kHz Tone Spacing
865
17
15
17
10
100
16
870
875
880
885
890
895
900
Pout, OUTPUT POWER (WATTS) AVG.
Pout, OUTPUT POWER (WATTS) CW AVG.
G
ps
,POWER
GAIN
(dB)
18
12
Figure 6. Power Gain, Efficiency versus Output
Power
1
13
10
7
Figure 7. Power Gain, Efficiency, ACPR versus
Output Power
1
19
15
11
9
13
17
14
15
16
17
10
100
G
ps
,POWER
GAIN
(dB)
,DRAIN
EFFICIENCY
(%)
h
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
20
60
50
40
30
20
10
0
,DRAIN
EFFICIENCY
(%)
h
,DRAIN
EFFICIENCY
(%)
&
ACPR
(dB)
h
36
34
32
30
28
35
40
45
50
1.00
1.25
1.50
1.75
2.00
,DRAINh
EFFICIENCY
(%)
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
VSWR
Gps
h
VSWR
40
60
20
0
40
60
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
VDD = 26 Vdc
IDQ = 700 mA
f1 = 880.0 MHz
f2 = 880.1 MHz
Gps
h
IMD
VDD = 26 Vdc
IDQ = 700 mA
f1 = 800.0 MHz
f2 = 800.1 MHz
3rd Order
5th Order
7th Order
Gps
h
VDD = 26 Vdc
IDQ = 700 mA
f = 880 MHz
Single Tone
Gps
h
VDD = 26 Vdc
IDQ = 700 mA
f = 880 MHz
750 kHz
1.98 MHz
G
ps
,POWER
GAIN
(dB)
19
LIFETIME
BUY
LAST
ORDER
04
APR
09
LAST
SHIP
03
OCT
09
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF9085LR3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9085LR5 | 功能描述:射頻MOSFET電源晶體管 90W 880MHZ 26V NI780L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9085LSR3 | 功能描述:射頻MOSFET電源晶體管 RF PWR LDMOS LTP COBRA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9085LSR5 | 功能描述:射頻MOSFET電源晶體管 90W RF PWR LDMOS NI780LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9085S | 制造商:Motorola Inc 功能描述: |
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