參數(shù)資料
型號: MRF9060LSR1
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-360S, CASE 360C-05, 2 PIN
文件頁數(shù): 5/12頁
文件大小: 411K
代理商: MRF9060LSR1
LIFETIME
BUY
LAST
ORDER
3
OCT
08
LAST
SHIP
14
MA
Y
09
2
RF Device Data
Freescale Semiconductor
MRF9060LSR1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μAdc)
VGS(th)
2
2.9
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 450 mAdc)
VGS(Q)
3.7
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 1.3 Adc)
VDS(on)
0.17
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 4 Adc)
gfs
5.3
S
Dynamic Characteristics
Input Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
98
pF
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
50
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
2
pF
(continued)
相關(guān)PDF資料
PDF描述
MRF9060MR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
MRF9060MBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF9060NR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
MRF9080LR3 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF9080LR3 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF9060LSR1_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF9060LSR5 功能描述:射頻MOSFET電源晶體管 60W RF PWR FET NI360LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF9060MBR1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
MRF9060MR1 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述:
MRF9060NBR1 功能描述:IC MOSFET RF N-CHAN TO272-2 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR