參數(shù)資料
型號: MRF9030NR1
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
封裝: ROHS COMPLIANT, PLASTIC, CASE 1265-08, 2 PIN
文件頁數(shù): 13/16頁
文件大?。?/td> 539K
代理商: MRF9030NR1
6
RF Device Data
Freescale Semiconductor
MRF9030NR1 MRF9030NBR1
TYPICAL CHARACTERISTICS
100
10
22
0.1
60
Gps
η
IMD
Pout, OUTPUT POWER (WATTS) PEP
Figure 9. Power Gain, Efficiency and IMD
versus Output Power
G
ps
,POWER
GAIN
(dB)
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
,DRAIN
EFFICIENCY
(%)
η
VDD = 26 Vdc
IDQ = 250 mA
f1 = 945 MHz
f2 = 945.1 MHz
20
40
18
20
16
0
14
20
12
40
10
1
210
1010
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than
±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
109
107
MTTF
FACT
OR
(HOURS
X
AMPS
2 )
90
110
130
150
170
190
100
120
140
160
180
200
Figure 10. MTTF Factor versus Junction Temperature
108
相關PDF資料
PDF描述
MRF9030S UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF9045MR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF9045MBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF9045NR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF9045NBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
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