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參數(shù)資料
| 型號： | MRF9030MBR1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封裝： | PLASTIC, CASE 1337-03, 2 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 435K |
| 代理商： | MRF9030MBR1 |
MRF9030MR1 MRF9030MBR1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
1
Adc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 Adc)
VGS(th)
2
2.9
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 250 mAdc)
VGS(Q)
3
3.8
5
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 0.7 Adc)
VDS(on)
—
0.23
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
—
2.7
—
S
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
—
49
—
pF
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
27
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.2
—
pF
FUNCTIONAL TESTS (In Motorola Test Fixture)
Two-Tone Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Gps
18
20
—
dB
Two-Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
η
37
41
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IMD
—
-31
-28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IRL
—
-13
-9
dB
Two-Tone Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Gps
—
20
—
dB
Two-Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
η
—
40.5
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IMD
—
-31
—
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IRL
—
-12
—
dB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF9030MBR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF9030MR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| MRF9030NR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF9030S | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF9030MR1 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9030MR1_07 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9030NBR1 | 功能描述:IC MOSFET RF N-CHAN TO272-2 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF9030NR1 | 功能描述:射頻MOSFET電源晶體管 30W RF PWR FET TO-270N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9030NR1_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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