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參數資料
| 型號： | MRF8S9260HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN |
| 文件頁數： | 10/14頁 |
| 文件大小： | 304K |
| 代理商： | MRF8S9260HSR3 |
MRF8S9260HR3 MRF8S9260HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IRL,
INPUT
RETURN
LOSS
(dB)
900
f, FREQUENCY (MHz)
Figure 2. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 75 Watts Avg.
-1 1
-15
16
21
-43
42
40
38
-35
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
20.5
20
19
910
920
930
940
950
960
970
980
-33
-19
P
ARC
(dB)
-2
0
-2.5
ACPR
(dBc)
Figure 3. Intermodulation Distortion Products
versus Two-T one Spacing
TWO-T ONE SPACING (MHz)
10
-60
-1 0
-2 0
-3 0
-5 0
1
100
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
-4 0
IM3-U
IM5-U
IM5-L
IM7-L
IM7-U
VDD = 28 Vdc, Pout = 250 W (PEP), IDQ = 1700 mA
Two-Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
Figure 4. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
-1
-3
-5
0
-2
-4
OUTPUT
COMPRESSION
A
T
0.01%
PROBABILITY
ON
CCDF
(dB)
35
60
160
0
60
50
40
30
20
10
η
D,
DRAIN
EFFICIENCY
(%)
-1 dB = 64 W
ηD
ACPR
(dBc)
-50
-20
-25
-30
-40
-35
-45
21
G
ps
,POWER
GAIN
(dB)
20
18
16
VDD = 28 Vdc, IDQ = 1700 mA, f = 940 MHz
Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
-2 dB = 88 W
-3 dB = 122 W
-9
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
85
110
ACPR
135
Gps
PARC
16.5
17
17.5
18
18.5
19.5
36
34
-37
-39
-41
-13
-17
-1.5
-1
-0.5
VDD = 28 Vdc, Pout = 75 W (Avg.)
IDQ = 1700 mA, Single-Carrier W-CDMA
19
17
15
Gps
ηD
IM3-L
IRL
PARC
ACPR
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相關代理商/技術參數 |
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| MRF9002R2 | 制造商:MOT 功能描述:_ |
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