- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98041 > MRF8S9220HSR3 (FREESCALE SEMICONDUCTOR INC) UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MRF8S9220HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數(shù)： | 7/14頁 |
| 文件大小： | 347K |
| 代理商： | MRF8S9220HSR3 |
2
RF Device Data
Freescale Semiconductor
MRF8S9220HR3 MRF8S9220HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1C (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 70 Vdc, VGS = 0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 μAdc)
VGS(th)
1.5
2.2
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1600 mAdc, Measured in Functional Test)
VGS(Q)
2.3
3.1
3.8
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 4 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, Pout = 65 W Avg., f = 960 MHz,
Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
18.0
19.4
21.0
dB
Drain Efficiency
ηD
34.0
35.7
—
%
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF
PAR
5.7
6.1
—
dB
Adjacent Channel Power Ratio
ACPR
—
-37.4
-35
dBc
Input Return Loss
IRL
—
-13
-8
dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, Pout = 65 W Avg.,
Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
hD
(%)
Output PAR
(dB)
ACPR
(dB)
IRL
(dB)
920 MHz
19.7
35.1
6.1
-37.4
-13
940 MHz
19.8
35.3
6.2
-37.5
-24
960 MHz
19.4
35.7
6.1
-37.4
-13
1. Part internally matched both on input and output.
(continued)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF8S9260HR3 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF8S9260HSR3 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF9002R2 | 3 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF901 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MPS901 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF8S9220HSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 WCDMA 66W 28V NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S9232NR3 | 功能描述:射頻MOSFET電源晶體管 HV8 900MHZ 60W OM780-2 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S9260HR3 | 功能描述:射頻MOSFET電源晶體管 HV8 900MHZ 260W NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S9260HR5 | 功能描述:射頻MOSFET電源晶體管 HV8 900MHZ 260W NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S9260HSR3 | 功能描述:射頻MOSFET電源晶體管 HV8 900MHZ 260W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。