參數(shù)資料
型號: MRF8S9120NR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, PLASTIC, OM-780-2, CASE 2021-03, 2 PIN
文件頁數(shù): 12/16頁
文件大小: 1530K
代理商: MRF8S9120NR3
MRF8S9120NR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IR
L,
IN
PU
T
RETU
RN
LO
SS
(d
B)
820
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 2. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 33 Watts Avg.
--5
--15
18.4
20.4
--39
37.5
36.5
35.5
--35
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
ηD
G
ps
,P
OWER
GAIN
(d
B)
20.2
20
19.6
840
860
880
900
920
940
960
980
--34
--25
PARC
PA
RC
(d
B)
--1.8
--1
--2
AC
PR
(d
Bc)
Figure 3. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
--60
--20
--30
--50
1
100
IM
D,
INT
ERM
O
DULA
TIO
N
DIST
O
RT
ION
(dBc
)
--40
IM3--U
IM3--L
IM5--U
IM5--L
Figure 4. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
--1
--3
--5
0
--2
--4
OU
TPU
T
CO
MPR
ESSION
AT
0.
01
%
PROBABILITY
ON
CCDF
(dB)
20
30
70
0
60
50
40
30
20
10
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
--1 dB = 30 W
ηD
AC
PR
(d
Bc)
--45
--15
--20
--25
--35
--30
--40
21
G
ps
,P
OWER
GAIN
(d
B)
20.5
19.5
18.5
VDD =28 Vdc,IDQ = 800 mA, f = 940 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
--2 dB = 43 W
--3 dB = 60 W
0
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
40
50
ACPR
--10
60
Gps
PARC
18.6
18.8
19
19.2
19.4
19.8
34.5
33.5
--36
--37
--38
--10
--20
--1.6
--1.4
--1.2
VDD =28 Vdc,Pout =33 W (Avg.),IDQ = 800 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
20
19
18
VDD =28 Vdc,Pout = 52 W (PEP), IDQ = 800 mA
Two--Tone Measurements, (f1 + f2)/2 = Center
Frequency of 940 MHz
IM7--L
IM7--U
相關PDF資料
PDF描述
MRF8S9202NR3 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF8S9220HSR3 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF8S9260HR3 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF8S9260HSR3 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF9002R2 3 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
MRF8S9170NR3 功能描述:射頻MOSFET電源晶體管 HV8 900MHz 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF8S9170NR3_10 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
MRF8S9200NR3 功能描述:射頻MOSFET電源晶體管 HV8 900MHz 58W OM780-2 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF8S9200NR3_10 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
MRF8S9202GNR3 功能描述:射頻MOSFET電源晶體管 HV8 900MHz 58W OM780-2G RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray