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參數(shù)資料
| 型號： | MRF8P26080HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780-4, CASE 465M-01, 4 PIN |
| 文件頁數(shù)： | 11/14頁 |
| 文件大?。?/td> | 563K |
| 代理商： | MRF8P26080HR3 |
6
RF Device Data
Freescale Semiconductor
MRF8P26080HR3 MRF8P26080HSR3
TYPICAL CHARACTERISTICS
1
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
--10
6
18
0
60
50
40
30
20
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
G
ps
,P
OWER
GAIN
(d
B)
10
100
10
--60
AC
PR
(d
Bc)
16
14
0
--20
Figure 8. Broadband Frequency Response
0
24
2450
f, FREQUENCY (MHz)
VDD =28 Vdc
Pin =0 dBm
IDQA = 300 mA
VGSB =1.3 Vdc
12
8
2500
GAIN
(d
B)
20
Gain
2550
2600
2650
2750
2850
12
10
8
--50
--40
--30
4
16
Gps
2800
2700
2570 MHz
ηD
2595 MHz 2620 MHz
2570 MHz
2595 MHz
2620 MHz
VDD =28 Vdc,IDQA = 300 mA, VGSB =1.3 Vdc
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF8P26080HR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2.6GHZ 80W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P26080HSR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2.6GHZ 80W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P26080HSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2.6GHZ 80W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P29300HR5 | 功能描述:射頻MOSFET電源晶體管 HV8 300W 50V NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P29300HR6 | 功能描述:射頻MOSFET電源晶體管 HV8 300W 50V NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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