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參數(shù)資料
| 型號(hào)： | MRF8P20165WHSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN |
| 文件頁(yè)數(shù)： | 2/16頁(yè) |
| 文件大?。?/td> | 738K |
| 代理商： | MRF8P20165WHSR3 |
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10
RF Device Data
Freescale Semiconductor
MRF8P20165WHR3 MRF8P20165WHSR3
VDD =28 Vdc,IDQA = 550 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zload (1)
()
Max Output Power
P1dB
P3dB
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
1930
16.0 -- j8.99
1.58 -- j5.68
50.4
110
55.3
51.2
132
55.8
1960
17.2 -- j2.43
1.55 -- j6.08
50.4
110
54.4
51.3
135
53.5
1990
18.6 + j3.55
1.93 -- j5.82
50.4
110
54.4
51.2
132
55.4
(1) Load impedance for optimum P1dB power.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Figure 16. Carrier Side Load Pull Performance — Maximum P1dB Tuning
Z source
Z load
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
VDD =28 Vdc,IDQA = 550 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zload (1)
()
Max Drain Efficiency
P1dB
P3dB
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
1930
16.0-- j8.99
3.45 -- j3.43
48.5
71
65.8
49.6
91
66.5
1960
17.2 -- j2.43
3.68 -- j3.88
48.7
74
65.6
49.6
91
66.1
1990
18.6 + j3.55
2.95-- j3.99
48.2
66
65.1
49.6
91
65.3
(1) Load impedance for optimum P1dB efficiency.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Figure 17. Carrier Side Load Pull Performance — Maximum Efficiency Tuning
Z source
Z load
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
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| MRF8P20165WHSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 165W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P23080HR3 | 功能描述:射頻MOSFET電源晶體管 RF FET HV8 2.3GHZ 80W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P23080HR5 | 功能描述:射頻MOSFET電源晶體管 RF FET HV8 2.3GHZ 80W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P23080HSR3 | 功能描述:射頻MOSFET電源晶體管 RF FET V8 2.3GHZ 80W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P23080HSR5 | 功能描述:射頻MOSFET電源晶體管 RF FET HV8 2.3GHZ 80W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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