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參數(shù)資料
| 型號(hào)： | MRF8P20161HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN |
| 文件頁數(shù)： | 12/13頁 |
| 文件大?。?/td> | 479K |
| 代理商： | MRF8P20161HSR3 |
8
RF Device Data
Freescale Semiconductor
MRF8P20161HSR3
VDD =28 Vdc,IDQA = 550 mA
f
MHz
Max Pout (1)
Zsource
Zload
Watts
dBm
1880
103
50.1
8.74 -- j9.81
2.08 -- j5.64
1930
108
50.3
13.6 -- j9.01
2.29 -- j5.66
1990
107
50.3
17.6 + j0.07
1.52 -- j5.96
2025
105
50.2
14.6 + j4.42
1.75 -- j5.54
(1) Maximum output power measurement reflects pulsed 1 dB gain compression.
Zsource = Test circuit impedance as measured from gate contact to ground.
Zload = Test circuit impedance as measured from drain contact to ground.
Figure 11. Carrier Side Load Pull Performance — Maximum P1dB Tuning
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
VDD =28 Vdc,IDQA = 550 mA
f
MHz
Max Eff. (1)
%
Zsource
Zload
1880
62.7
8.74 -- j9.81
3.61 -- j2.84
1930
66.2
13.6 -- j9.01
3.84 -- j4.10
1990
63.5
17.6 + j0.07
3.02 -- j5.11
2025
64.1
14.6 + j4.42
3.30 -- j4.36
(1) Maximum efficiency measurement reflects pulsed 1 dB gain compression.
Zsource = Test circuit impedance as measured from gate contact to ground.
Zload = Test circuit impedance as measured from drain contact to ground.
Figure 12. Carrier Side Load Pull Performance — Maximum Efficiency Tuning
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
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| MRF8P20161HSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 161W NI780HS-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P20165WHR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 165W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P20165WHR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 165W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P20165WHSR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 165W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P20165WHSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 165W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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