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參數(shù)資料
| 型號(hào)： | MRF8HP21080HSR5 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN |
| 文件頁(yè)數(shù)： | 12/14頁(yè) |
| 文件大小： | 528K |
| 代理商： | MRF8HP21080HSR5 |
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MRF8HP21080HR3 MRF8HP21080HSR3
7
RF Device Data
Freescale Semiconductor
VDD =28 Vdc,IDQA = 150 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zload (1)
()
Max Output Power
P1dB
P3dB
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
2110
6.97 -- j14.8
6.61 -- j11.5
47.2
53
57.1
48.0
63
57.4
2140
7.61 -- j17.9
6.33 -- j12.0
47.1
51
55.7
48.0
63
56.0
2170
6.68 -- j18.7
6.41 -- j11.2
46.9
49
54.5
47.9
62
56.1
(1) Load impedance for optimum P1dB power.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Figure 10. Carrier Side Load Pull Performance — Maximum P1dB Tuning
Z source
Z load
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
VDD =28 Vdc,IDQA = 150 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zload (1)
()
Max Drain Efficiency
P1dB
P3dB
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
2110
6.97 -- j14.8
14.3 -- j9.22
45.6
36
65.1
46.7
47
65.9
2140
7.61 -- j17.9
14.4 -- j9.52
45.5
36
64.2
46.7
47
65.1
2170
6.68 -- j18.7
13.8 -- j8.09
45.6
36
63.9
46.6
46
65.9
(1) Load impedance for optimum P1dB efficiency.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Figure 11. Carrier Side Load Pull Performance — Maximum Efficiency Tuning
Z source
Z load
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF8HP21130HR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 130W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8HP21130HR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 130W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8HP21130HSR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 130W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8HP21130HSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 130W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P18265HR5 | 功能描述:射頻MOSFET電源晶體管 HV8 260W DOHERT NI1230-8 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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